Abstract
In this study, we derive a grazing-incidence X-ray scattering (GIXS) formula to analyze quantitatively GIXS patterns for molecularly stacked layer structures in substrate-supported nanoscale thin films. We apply this formula in the quantitative analysis of GIXS patterns obtained for S-docosanylcysteine thin films on silicon substrates with native oxide layers. This analysis successfully provides information on the structural parameters and orientation of the molecular layer stack developed in S-docosanylcysteine thin films.
Original language | English |
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Pages (from-to) | s669-s674 |
Journal | Journal of Applied Crystallography |
Volume | 40 |
Issue number | SUPPL. 1 |
DOIs | |
State | Published - Apr 2007 |
Keywords
- Grazing-incidence X-ray scattering
- Molecularly stacked layer structure
- Orientation and distribution