Quantum dot active regions based on diblock copolymer nanopatterning and selective MOCVD growth

L. J. Mawst, J. H. Park, Y. Huang, J. Kirch, T. Kim, C. C. Liu, P. F. Nealey, T. F. Kuech, Y. Sin, B. Foran

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Structural and optical properties of quantum dots fabricated using diblock copolymer lithography and selective MOCVD growth are reported. Tensile-strained (InxGa1-xAs) and compressively-strained (InAs) QDs on InP exhibit luminescence near 1.4 and 2.1 μm respectively.

Original languageEnglish
Title of host publication2011 IEEE Winter Topicals, WTM 2011
Pages33-34
Number of pages2
DOIs
StatePublished - 2011
Event2011 Winter Topical Meetings, WTM 2011 - Keystone, CO, United States
Duration: 10 Jan 201112 Jan 2011

Publication series

Name2011 IEEE Winter Topicals, WTM 2011

Conference

Conference2011 Winter Topical Meetings, WTM 2011
Country/TerritoryUnited States
CityKeystone, CO
Period10/01/1112/01/11

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