Quantum dot active regions based on diblock copolymer nanopatterning and selective MOCVD growth

L. J. Mawst; J. H. Park; Y. Huang; J. Kirch; T. Kim; C. C. Liu; P. F. Nealey; T. F. Kuech; Y. Sin; B. Foran

doi:10.1109/PHOTWTM.2011.5730032

Quantum dot active regions based on diblock copolymer nanopatterning and selective MOCVD growth

L. J. Mawst
, J. H. Park
, Y. Huang
, J. Kirch
, T. Kim
, C. C. Liu
, P. F. Nealey
, T. F. Kuech
, Y. Sin
, B. Foran

School of Advanced Fusion Studies

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Structural and optical properties of quantum dots fabricated using diblock copolymer lithography and selective MOCVD growth are reported. Tensile-strained (In_xGa_1-xAs) and compressively-strained (InAs) QDs on InP exhibit luminescence near 1.4 and 2.1 μm respectively.

Original language	English
Title of host publication	2011 IEEE Winter Topicals, WTM 2011
Pages	33-34
Number of pages	2
DOIs	https://doi.org/10.1109/PHOTWTM.2011.5730032
State	Published - 2011
Event	2011 Winter Topical Meetings, WTM 2011 - Keystone, CO, United States Duration: 10 Jan 2011 → 12 Jan 2011

Publication series

Name	2011 IEEE Winter Topicals, WTM 2011

Conference

Conference	2011 Winter Topical Meetings, WTM 2011
Country/Territory	United States
City	Keystone, CO
Period	10/01/11 → 12/01/11

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10.1109/PHOTWTM.2011.5730032

Cite this

Mawst, L. J., Park, J. H., Huang, Y., Kirch, J., Kim, T., Liu, C. C., Nealey, P. F., Kuech, T. F., Sin, Y., & Foran, B. (2011). Quantum dot active regions based on diblock copolymer nanopatterning and selective MOCVD growth. In 2011 IEEE Winter Topicals, WTM 2011 (pp. 33-34). Article 5730032 (2011 IEEE Winter Topicals, WTM 2011). https://doi.org/10.1109/PHOTWTM.2011.5730032

@inproceedings{364d8f39e6544f629fad504fa63a7f11,

title = "Quantum dot active regions based on diblock copolymer nanopatterning and selective MOCVD growth",

abstract = "Structural and optical properties of quantum dots fabricated using diblock copolymer lithography and selective MOCVD growth are reported. Tensile-strained (InxGa1-xAs) and compressively-strained (InAs) QDs on InP exhibit luminescence near 1.4 and 2.1 μm respectively.",

author = "Mawst, \{L. J.\} and Park, \{J. H.\} and Y. Huang and J. Kirch and T. Kim and Liu, \{C. C.\} and Nealey, \{P. F.\} and Kuech, \{T. F.\} and Y. Sin and B. Foran",

year = "2011",

doi = "10.1109/PHOTWTM.2011.5730032",

language = "English",

isbn = "9781424484287",

series = "2011 IEEE Winter Topicals, WTM 2011",

pages = "33--34",

booktitle = "2011 IEEE Winter Topicals, WTM 2011",

note = "2011 Winter Topical Meetings, WTM 2011 ; Conference date: 10-01-2011 Through 12-01-2011",

}

Mawst, LJ, Park, JH, Huang, Y, Kirch, J, Kim, T, Liu, CC, Nealey, PF, Kuech, TF, Sin, Y & Foran, B 2011, Quantum dot active regions based on diblock copolymer nanopatterning and selective MOCVD growth. in 2011 IEEE Winter Topicals, WTM 2011., 5730032, 2011 IEEE Winter Topicals, WTM 2011, pp. 33-34, 2011 Winter Topical Meetings, WTM 2011, Keystone, CO, United States, 10/01/11. https://doi.org/10.1109/PHOTWTM.2011.5730032

TY - GEN

T1 - Quantum dot active regions based on diblock copolymer nanopatterning and selective MOCVD growth

AU - Mawst, L. J.

AU - Park, J. H.

AU - Huang, Y.

AU - Kirch, J.

AU - Kim, T.

AU - Liu, C. C.

AU - Nealey, P. F.

AU - Kuech, T. F.

AU - Sin, Y.

AU - Foran, B.

PY - 2011

Y1 - 2011

N2 - Structural and optical properties of quantum dots fabricated using diblock copolymer lithography and selective MOCVD growth are reported. Tensile-strained (InxGa1-xAs) and compressively-strained (InAs) QDs on InP exhibit luminescence near 1.4 and 2.1 μm respectively.

AB - Structural and optical properties of quantum dots fabricated using diblock copolymer lithography and selective MOCVD growth are reported. Tensile-strained (InxGa1-xAs) and compressively-strained (InAs) QDs on InP exhibit luminescence near 1.4 and 2.1 μm respectively.

UR - https://www.scopus.com/pages/publications/79953686837

U2 - 10.1109/PHOTWTM.2011.5730032

DO - 10.1109/PHOTWTM.2011.5730032

M3 - Conference contribution

AN - SCOPUS:79953686837

SN - 9781424484287

T3 - 2011 IEEE Winter Topicals, WTM 2011

SP - 33

EP - 34

BT - 2011 IEEE Winter Topicals, WTM 2011

T2 - 2011 Winter Topical Meetings, WTM 2011

Y2 - 10 January 2011 through 12 January 2011

ER -

Quantum dot active regions based on diblock copolymer nanopatterning and selective MOCVD growth

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