Quantum dot active regions based on diblock copolymer nanopatterning and selective MOCVD growth

L. J. Mawst; J. H. Park; Y. Huang; J. Kirch; T. Kim; C. C. Liu; P. F. Nealey; T. F. Kuech; Y. Sin; B. Foran

doi:10.1109/PHOTWTM.2011.5730032

Quantum dot active regions based on diblock copolymer nanopatterning and selective MOCVD growth

L. J. Mawst, J. H. Park, Y. Huang, J. Kirch, T. Kim, C. C. Liu, P. F. Nealey, T. F. Kuech, Y. Sin, B. Foran

School of Advanced Fusion Studies

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Structural and optical properties of quantum dots fabricated using diblock copolymer lithography and selective MOCVD growth are reported. Tensile-strained (In_xGa_1-xAs) and compressively-strained (InAs) QDs on InP exhibit luminescence near 1.4 and 2.1 μm respectively.

Original language	English
Title of host publication	2011 IEEE Winter Topicals, WTM 2011
Pages	33-34
Number of pages	2
DOIs	https://doi.org/10.1109/PHOTWTM.2011.5730032
State	Published - 2011
Event	2011 Winter Topical Meetings, WTM 2011 - Keystone, CO, United States Duration: 10 Jan 2011 → 12 Jan 2011

Publication series

Name	2011 IEEE Winter Topicals, WTM 2011

Conference

Conference	2011 Winter Topical Meetings, WTM 2011
Country/Territory	United States
City	Keystone, CO
Period	10/01/11 → 12/01/11

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10.1109/PHOTWTM.2011.5730032

Cite this

Mawst, L. J., Park, J. H., Huang, Y., Kirch, J., Kim, T., Liu, C. C., Nealey, P. F., Kuech, T. F., Sin, Y., & Foran, B. (2011). Quantum dot active regions based on diblock copolymer nanopatterning and selective MOCVD growth. In 2011 IEEE Winter Topicals, WTM 2011 (pp. 33-34). Article 5730032 (2011 IEEE Winter Topicals, WTM 2011). https://doi.org/10.1109/PHOTWTM.2011.5730032

@inproceedings{364d8f39e6544f629fad504fa63a7f11,

title = "Quantum dot active regions based on diblock copolymer nanopatterning and selective MOCVD growth",

abstract = "Structural and optical properties of quantum dots fabricated using diblock copolymer lithography and selective MOCVD growth are reported. Tensile-strained (InxGa1-xAs) and compressively-strained (InAs) QDs on InP exhibit luminescence near 1.4 and 2.1 μm respectively.",

author = "Mawst, \{L. J.\} and Park, \{J. H.\} and Y. Huang and J. Kirch and T. Kim and Liu, \{C. C.\} and Nealey, \{P. F.\} and Kuech, \{T. F.\} and Y. Sin and B. Foran",

year = "2011",

doi = "10.1109/PHOTWTM.2011.5730032",

language = "English",

isbn = "9781424484287",

series = "2011 IEEE Winter Topicals, WTM 2011",

pages = "33--34",

booktitle = "2011 IEEE Winter Topicals, WTM 2011",

note = "2011 Winter Topical Meetings, WTM 2011 ; Conference date: 10-01-2011 Through 12-01-2011",

}

Mawst, LJ, Park, JH, Huang, Y, Kirch, J, Kim, T, Liu, CC, Nealey, PF, Kuech, TF, Sin, Y & Foran, B 2011, Quantum dot active regions based on diblock copolymer nanopatterning and selective MOCVD growth. in 2011 IEEE Winter Topicals, WTM 2011., 5730032, 2011 IEEE Winter Topicals, WTM 2011, pp. 33-34, 2011 Winter Topical Meetings, WTM 2011, Keystone, CO, United States, 10/01/11. https://doi.org/10.1109/PHOTWTM.2011.5730032

TY - GEN

T1 - Quantum dot active regions based on diblock copolymer nanopatterning and selective MOCVD growth

AU - Mawst, L. J.

AU - Park, J. H.

AU - Huang, Y.

AU - Kirch, J.

AU - Kim, T.

AU - Liu, C. C.

AU - Nealey, P. F.

AU - Kuech, T. F.

AU - Sin, Y.

AU - Foran, B.

PY - 2011

Y1 - 2011

N2 - Structural and optical properties of quantum dots fabricated using diblock copolymer lithography and selective MOCVD growth are reported. Tensile-strained (InxGa1-xAs) and compressively-strained (InAs) QDs on InP exhibit luminescence near 1.4 and 2.1 μm respectively.

AB - Structural and optical properties of quantum dots fabricated using diblock copolymer lithography and selective MOCVD growth are reported. Tensile-strained (InxGa1-xAs) and compressively-strained (InAs) QDs on InP exhibit luminescence near 1.4 and 2.1 μm respectively.

UR - https://www.scopus.com/pages/publications/79953686837

U2 - 10.1109/PHOTWTM.2011.5730032

DO - 10.1109/PHOTWTM.2011.5730032

M3 - Conference contribution

AN - SCOPUS:79953686837

SN - 9781424484287

T3 - 2011 IEEE Winter Topicals, WTM 2011

SP - 33

EP - 34

BT - 2011 IEEE Winter Topicals, WTM 2011

T2 - 2011 Winter Topical Meetings, WTM 2011

Y2 - 10 January 2011 through 12 January 2011

ER -

Quantum dot active regions based on diblock copolymer nanopatterning and selective MOCVD growth

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