Radio frequency electrical pulse characterization of defect states in a GaAs/AlGaAs narrow channel field effect transistor

We report electrical pulse-and-probe characterization of trap states in a GaAs/AlGaAs narrow channel field effect transistor (NCFET) up to the frequency (f) of 3 GHz. From our measured data and quantitative modeling of trap dynamics, we successfully obtain the characteristic frequency of surface traps (∼1.4 and ∼100 kHz) and that of bulk deep levels (∼10 MHz). We find that these frequencies are consistent with the results of earlier studies on larger devices. The measured data also shows the intrinsic cutoff frequency of the device (∼500 MHz), which is consistent with the transconductance and the gate capacitance of the device. Our technique can be applied to other 1D material whose capacitance is small and conventional probing technique is not efficient.