Radio frequency pulse response of an in-plane-gate field effect transistor

We report radio frequency responses of an in-plane-gate field effect transistor (IPGFET) using an electrical pulse and probe technique. A series of high frequency pulses with the frequency up to 3 GHz were superimposed on the DC gate bias, and the time-averaged drain current was measured. The frequency and amplitude dependence of the time-averaged current depended on both the intrinsic gate response time of the IPGFET and the charging/discharging time of the traps at the etched surface.