Recent progress in ferroelectic-gate FETs

Hiroshi Ishiwara, Byung Eun Park

Research output: Contribution to journalConference articlepeer-review

7 Scopus citations


Recent progress in the research of ferroelectric-gate FETs is reviewed mainly from a view-point of the data retention characteristics. First, importance of insulator-inserted gate structures such as an MFIS (M; metal, F; ferroelectric, I; insulator, S; semiconductor) or MFMIS structure is described and the necessary conditions for the insulating buffer layer and the ferroelectric film are discussed. Then, experimental results for the SiO 2 and high-k dielectric buffer layers combined with such ferroelectric films as SET (SrBi2Ta2O9) and BLT ((Bi,La)4Ti3O12) are presented, in which particular attention is paid to the discussion on the induced charge matching between the buffer layer and the ferroelectric film. As an example, it is shown in a Pt/BLT/LaAlO3/Si diode that the high and low capacitance values written by positive and negative pulses can be retained at least for 3 days. Finally, recent experimental results on the data retention characteristics of the ferroelectric-gate FETs are presented.

Original languageEnglish
Pages (from-to)61-68
Number of pages8
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 2003
EventCrystalline Oxide-Silicon Heterostructures and Oxide Optoelectronics - Boston, MA, United States
Duration: 2 Dec 20024 Dec 2002


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