Reduction of efficiency droop in green strain-compensated InGaN/InGaN light-emitting diodes grown on InGaN substrate

Seoung Hwan Park; Tae Hoon Chung; Jong Hyeob Baek; Doyeol Ahn

doi:10.7567/JJAP.54.022101

Reduction of efficiency droop in green strain-compensated InGaN/InGaN light-emitting diodes grown on InGaN substrate

Seoung Hwan Park, Tae Hoon Chung, Jong Hyeob Baek, Doyeol Ahn

School of Electrical and Computer Engineering

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Abstract

The efficiency droop characteristics of green strain-compensated InGaN/InGaN light-emitting diodes (LEDs) grown on an InGaN substrate are investigated by using the multi-band effective mass theory and drift-diffusion model. The radiative recombination coefficient B_eff of the strain-compensated quantum well (QW) structure is shown to be much larger than that of the conventional QW structure. Also, we find that the effective active volume of the LEDs increases with the inclusion of strain-compensated layers. This can be explained by the fact that the overlap between electron and hole concentrations increases owing to the decrease in internal field. As a result, the efficiency droop phenomenon for the strain-compensated LEDs is expected to be reduced, compared with that for conventional LEDs.

Original language	English
Article number	022101
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	54
Issue number	2
DOIs	https://doi.org/10.7567/JJAP.54.022101
State	Published - 1 Feb 2015

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title = "Reduction of efficiency droop in green strain-compensated InGaN/InGaN light-emitting diodes grown on InGaN substrate",

abstract = "The efficiency droop characteristics of green strain-compensated InGaN/InGaN light-emitting diodes (LEDs) grown on an InGaN substrate are investigated by using the multi-band effective mass theory and drift-diffusion model. The radiative recombination coefficient Beff of the strain-compensated quantum well (QW) structure is shown to be much larger than that of the conventional QW structure. Also, we find that the effective active volume of the LEDs increases with the inclusion of strain-compensated layers. This can be explained by the fact that the overlap between electron and hole concentrations increases owing to the decrease in internal field. As a result, the efficiency droop phenomenon for the strain-compensated LEDs is expected to be reduced, compared with that for conventional LEDs.",

author = "Park, {Seoung Hwan} and Chung, {Tae Hoon} and Baek, {Jong Hyeob} and Doyeol Ahn",

note = "Publisher Copyright: {\textcopyright} 2015 The Japan Society of Applied Physics.",

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Reduction of efficiency droop in green strain-compensated InGaN/InGaN light-emitting diodes grown on InGaN substrate. / Park, Seoung Hwan; Chung, Tae Hoon; Baek, Jong Hyeob et al.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 54, No. 2, 022101, 01.02.2015.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Reduction of efficiency droop in green strain-compensated InGaN/InGaN light-emitting diodes grown on InGaN substrate

AU - Park, Seoung Hwan

AU - Chung, Tae Hoon

AU - Baek, Jong Hyeob

AU - Ahn, Doyeol

PY - 2015/2/1

Y1 - 2015/2/1

N2 - The efficiency droop characteristics of green strain-compensated InGaN/InGaN light-emitting diodes (LEDs) grown on an InGaN substrate are investigated by using the multi-band effective mass theory and drift-diffusion model. The radiative recombination coefficient Beff of the strain-compensated quantum well (QW) structure is shown to be much larger than that of the conventional QW structure. Also, we find that the effective active volume of the LEDs increases with the inclusion of strain-compensated layers. This can be explained by the fact that the overlap between electron and hole concentrations increases owing to the decrease in internal field. As a result, the efficiency droop phenomenon for the strain-compensated LEDs is expected to be reduced, compared with that for conventional LEDs.

AB - The efficiency droop characteristics of green strain-compensated InGaN/InGaN light-emitting diodes (LEDs) grown on an InGaN substrate are investigated by using the multi-band effective mass theory and drift-diffusion model. The radiative recombination coefficient Beff of the strain-compensated quantum well (QW) structure is shown to be much larger than that of the conventional QW structure. Also, we find that the effective active volume of the LEDs increases with the inclusion of strain-compensated layers. This can be explained by the fact that the overlap between electron and hole concentrations increases owing to the decrease in internal field. As a result, the efficiency droop phenomenon for the strain-compensated LEDs is expected to be reduced, compared with that for conventional LEDs.

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U2 - 10.7567/JJAP.54.022101

DO - 10.7567/JJAP.54.022101

M3 - Article

AN - SCOPUS:84923205222

SN - 0021-4922

VL - 54

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 2

M1 - 022101

ER -

Reduction of efficiency droop in green strain-compensated InGaN/InGaN light-emitting diodes grown on InGaN substrate

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