Resistance changes of Pr0.7Ca0.3MnO3 films deposited through rf-magnetron sputtering

Kwangseok Lee; Seungwoo Han; Kyoungwan Park; Junghyun Sok

Resistance changes of Pr_0.7Ca_0.3MnO₃ films deposited through rf-magnetron sputtering

Kwangseok Lee, Seungwoo Han, Kyoungwan Park, Junghyun Sok

Department of Physics

University of Seoul

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

In this paper, the resistance-change behavior of a perovskite material was studied. In particular, Pr_0.7Ca_0.3MnO₃ (PCMO) films were deposited on a Pt bottom electrode by using an rf-magnetron sputtering system. The PCMO films showed a resistance-switching behavior at room temperature. They were then deposited at 300 °C with different oxygen flow rates, and the deposited films were post-annealed at various temperatures in an O₂ or N₂ atmosphere. The ratio of the resistance change of the post-annealed PCMO films in the high-resistance state to that in the low-resistance state in an O₂ atmosphere turned out to be much larger than that of the post-annealed films in a N₂ atmosphere. The electrical properties of the PCMO films were also significantly affected by the top electrode. The resistance changes of the Ag/PCMO/Pt device turned out to be larger than those of the Au/PCMO/Pt device. It can, therefore, be concluded that the O₂ content and the top electrode improve the electroresistance.

Original language	English
Pages (from-to)	1062-1065
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	49
Issue number	3
State	Published - Sep 2006

Keywords

PrCaMnO (PCMO)
ReRAM
Resistance changes

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title = "Resistance changes of Pr0.7Ca0.3MnO3 films deposited through rf-magnetron sputtering",

abstract = "In this paper, the resistance-change behavior of a perovskite material was studied. In particular, Pr0.7Ca0.3MnO3 (PCMO) films were deposited on a Pt bottom electrode by using an rf-magnetron sputtering system. The PCMO films showed a resistance-switching behavior at room temperature. They were then deposited at 300 °C with different oxygen flow rates, and the deposited films were post-annealed at various temperatures in an O2 or N2 atmosphere. The ratio of the resistance change of the post-annealed PCMO films in the high-resistance state to that in the low-resistance state in an O2 atmosphere turned out to be much larger than that of the post-annealed films in a N2 atmosphere. The electrical properties of the PCMO films were also significantly affected by the top electrode. The resistance changes of the Ag/PCMO/Pt device turned out to be larger than those of the Au/PCMO/Pt device. It can, therefore, be concluded that the O2 content and the top electrode improve the electroresistance.",

keywords = "PrCaMnO (PCMO), ReRAM, Resistance changes",

author = "Kwangseok Lee and Seungwoo Han and Kyoungwan Park and Junghyun Sok",

year = "2006",

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language = "English",

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pages = "1062--1065",

journal = "Journal of the Korean Physical Society",

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TY - JOUR

T1 - Resistance changes of Pr0.7Ca0.3MnO3 films deposited through rf-magnetron sputtering

AU - Lee, Kwangseok

AU - Han, Seungwoo

AU - Park, Kyoungwan

AU - Sok, Junghyun

PY - 2006/9

Y1 - 2006/9

N2 - In this paper, the resistance-change behavior of a perovskite material was studied. In particular, Pr0.7Ca0.3MnO3 (PCMO) films were deposited on a Pt bottom electrode by using an rf-magnetron sputtering system. The PCMO films showed a resistance-switching behavior at room temperature. They were then deposited at 300 °C with different oxygen flow rates, and the deposited films were post-annealed at various temperatures in an O2 or N2 atmosphere. The ratio of the resistance change of the post-annealed PCMO films in the high-resistance state to that in the low-resistance state in an O2 atmosphere turned out to be much larger than that of the post-annealed films in a N2 atmosphere. The electrical properties of the PCMO films were also significantly affected by the top electrode. The resistance changes of the Ag/PCMO/Pt device turned out to be larger than those of the Au/PCMO/Pt device. It can, therefore, be concluded that the O2 content and the top electrode improve the electroresistance.

AB - In this paper, the resistance-change behavior of a perovskite material was studied. In particular, Pr0.7Ca0.3MnO3 (PCMO) films were deposited on a Pt bottom electrode by using an rf-magnetron sputtering system. The PCMO films showed a resistance-switching behavior at room temperature. They were then deposited at 300 °C with different oxygen flow rates, and the deposited films were post-annealed at various temperatures in an O2 or N2 atmosphere. The ratio of the resistance change of the post-annealed PCMO films in the high-resistance state to that in the low-resistance state in an O2 atmosphere turned out to be much larger than that of the post-annealed films in a N2 atmosphere. The electrical properties of the PCMO films were also significantly affected by the top electrode. The resistance changes of the Ag/PCMO/Pt device turned out to be larger than those of the Au/PCMO/Pt device. It can, therefore, be concluded that the O2 content and the top electrode improve the electroresistance.

KW - PrCaMnO (PCMO)

KW - ReRAM

KW - Resistance changes

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M3 - Article

AN - SCOPUS:33749828631

SN - 0374-4884

VL - 49

SP - 1062

EP - 1065

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 3

ER -

Resistance changes of Pr_0.7Ca_0.3MnO₃ films deposited through rf-magnetron sputtering

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Keywords

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