Resistive random-access memory with an a-Si/SiNx double-layer

Hui Tae Kwon, Won Joo Lee, Hyun Seok Choi, Daehoon Wee, Yu Jeong Park, Boram Kim, Min Hwi Kim, Sungjun Kim, Byung Gook Park, Yoon Kim

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


Resistive random-access memory (RRAM) with a Ni/SiNx/a-Si/p+-Si structure is presented. In contrast to RRAM devices based on high-k materials, the proposed Si-based device is more attractive and promising because the SiNx and a-Si layers have full compatibility with conventional complementary metal-oxidesemiconductor technology. The proposed device is compared to a control device with a single layer of SiNx. A conduction path containing Si dangling bonds (traps) can be generated in both the SiNx and a-Si layers. The conduction path in each layer can be controlled by the compliance current during the forming process. For high compliance current mode, the double-layer device has a higher ON/OFF ratio (∼104) and lower leakage current (∼10-9 A) than the single-layer device. For low compliance current mode, better non-linearity (∼103) can be obtained when a 1/2 read bias scheme is applied to the cross-point array.

Original languageEnglish
Pages (from-to)64-69
Number of pages6
JournalSolid-State Electronics
StatePublished - Aug 2019


  • MIS (Metal-Insulator-Semiconductor) RRAM
  • Resistive random-access memory (RRAM)
  • Silicon nitride (SiN)


Dive into the research topics of 'Resistive random-access memory with an a-Si/SiNx double-layer'. Together they form a unique fingerprint.

Cite this