Retention Characteristics and DMP Efficiency in V-NAND With Dimple Structure

Seongwoo Kim; Gunwook Yoon; Seungjae Baik; Myounggon Kang

doi:10.1109/JEDS.2025.3589680

Retention Characteristics and DMP Efficiency in V-NAND With Dimple Structure

Seongwoo Kim
, Gunwook Yoon
, Seungjae Baik
, Myounggon Kang

School of Advanced Fusion Studies

Research output: Contribution to journal › Article › peer-review

Abstract

In this paper, we analyze the retention characteristics of vertical NAND(V-NAND) with dimpled (convex and concave) structures considering the impact of adjacent cell states. Additionally, we assess the efficiency of the previously proposed dummy cell program (DMP) in improving retention characteristics. Our results indicate that when the adjacent cell is in the erased state, the retention characteristics of the target cell are affected by conduction band (E_{C}) variations due to trapped electrons. The concave structure shows the best retention characteristics, whereas the convex structure shows the most degradation. This difference becomes even more pronounced when the adjacent cell is in the programmed state. However, when DMP is applied to the convex structure, which exhibits the most degraded retention characteristics, the greatest improvement is observed due to significant changes in channel potential (V_ch) caused by the fast-programming speed.

Original language	English
Pages (from-to)	655-658
Number of pages	4
Journal	IEEE Journal of the Electron Devices Society
Volume	13
DOIs	https://doi.org/10.1109/JEDS.2025.3589680
State	Published - 2025

Keywords

V-NAND
channel potential
dimple
down coupling phenomenon
retention

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10.1109/JEDS.2025.3589680

Cite this

@article{8a041780696e4b129e486b104565c91f,

title = "Retention Characteristics and DMP Efficiency in V-NAND With Dimple Structure",

abstract = "In this paper, we analyze the retention characteristics of vertical NAND(V-NAND) with dimpled (convex and concave) structures considering the impact of adjacent cell states. Additionally, we assess the efficiency of the previously proposed dummy cell program (DMP) in improving retention characteristics. Our results indicate that when the adjacent cell is in the erased state, the retention characteristics of the target cell are affected by conduction band (E\_\{C\}) variations due to trapped electrons. The concave structure shows the best retention characteristics, whereas the convex structure shows the most degradation. This difference becomes even more pronounced when the adjacent cell is in the programmed state. However, when DMP is applied to the convex structure, which exhibits the most degraded retention characteristics, the greatest improvement is observed due to significant changes in channel potential (Vch) caused by the fast-programming speed.",

keywords = "V-NAND, channel potential, dimple, down coupling phenomenon, retention",

author = "Seongwoo Kim and Gunwook Yoon and Seungjae Baik and Myounggon Kang",

note = "Publisher Copyright: {\textcopyright} 2013 IEEE.",

year = "2025",

doi = "10.1109/JEDS.2025.3589680",

language = "English",

volume = "13",

pages = "655--658",

journal = "IEEE Journal of the Electron Devices Society",

issn = "2168-6734",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - Retention Characteristics and DMP Efficiency in V-NAND With Dimple Structure

AU - Kim, Seongwoo

AU - Yoon, Gunwook

AU - Baik, Seungjae

AU - Kang, Myounggon

PY - 2025

Y1 - 2025

N2 - In this paper, we analyze the retention characteristics of vertical NAND(V-NAND) with dimpled (convex and concave) structures considering the impact of adjacent cell states. Additionally, we assess the efficiency of the previously proposed dummy cell program (DMP) in improving retention characteristics. Our results indicate that when the adjacent cell is in the erased state, the retention characteristics of the target cell are affected by conduction band (E_{C}) variations due to trapped electrons. The concave structure shows the best retention characteristics, whereas the convex structure shows the most degradation. This difference becomes even more pronounced when the adjacent cell is in the programmed state. However, when DMP is applied to the convex structure, which exhibits the most degraded retention characteristics, the greatest improvement is observed due to significant changes in channel potential (Vch) caused by the fast-programming speed.

AB - In this paper, we analyze the retention characteristics of vertical NAND(V-NAND) with dimpled (convex and concave) structures considering the impact of adjacent cell states. Additionally, we assess the efficiency of the previously proposed dummy cell program (DMP) in improving retention characteristics. Our results indicate that when the adjacent cell is in the erased state, the retention characteristics of the target cell are affected by conduction band (E_{C}) variations due to trapped electrons. The concave structure shows the best retention characteristics, whereas the convex structure shows the most degradation. This difference becomes even more pronounced when the adjacent cell is in the programmed state. However, when DMP is applied to the convex structure, which exhibits the most degraded retention characteristics, the greatest improvement is observed due to significant changes in channel potential (Vch) caused by the fast-programming speed.

KW - V-NAND

KW - channel potential

KW - dimple

KW - down coupling phenomenon

KW - retention

UR - https://www.scopus.com/pages/publications/105012300805

U2 - 10.1109/JEDS.2025.3589680

DO - 10.1109/JEDS.2025.3589680

M3 - Article

AN - SCOPUS:105012300805

SN - 2168-6734

VL - 13

SP - 655

EP - 658

JO - IEEE Journal of the Electron Devices Society

JF - IEEE Journal of the Electron Devices Society

ER -

Retention Characteristics and DMP Efficiency in V-NAND With Dimple Structure

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Keywords

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