Retention characteristics of (Bi,La)4Ti3O 12 films on Si(100) substrates using LaAlO3 buffer layers

Byung Eun Park, Hiroshi Ishiwara

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1 Scopus citations


We demonstrate the ferroelectric behavior of (Bi,La)4Ti 3O12 (BLT) films deposited on Si(100) substrates by using LaAlO3 buffer layers. LaAlO3 films were prepared by molecular beam deposition method. Then, they were subjected to ex situ dry N2 annealing in a rapid thermal annealing furnace. From the capacitance-voltage measurement, the dielectric constant of LaAlO3 was estimated to be 20 to 26. On these structures, BLT films were deposited by sol-gel method and they were characterized by X-ray diffraction analysis. It was found from capacitance-voltage measurements that the characteristics showed a hysteresis loop and the memory window was about 0.5 V for the voltage sweep of ±9 V. It was also found from the retention measurement that the higher and lower capacitance values in the hysterisis loop could be distinguished at least for 3 days. It is concluded from these results that the BLT/LaAlO 3/Si(100) structure is one of the most promising structures for realizing MFISFETs (metal-ferroelectric-insulator-semiconductor field effect transistors).

Original languageEnglish
Pages (from-to)187-193
Number of pages7
JournalIntegrated Ferroelectrics
StatePublished - 2003


  • BLT
  • FeRAM
  • LaAlO
  • MFIS structure
  • Memory window
  • Retention


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