@inproceedings{f927b3a960f04d40802b3e26c64f3c9b,
title = "Role of SrRuO3 buffer layers in enhancing resistance changing of Pr0.7Ca0.3MnO3 films",
abstract = "Resistance-switching behaviors of the Pr0.7Ca 0.3MnO3(PCMO) films based metal-insulator-metal (MIM) devices has been investigated. In this work, resistance change of PCMO films deposited with SRO buffer layers by using RF-magnetron sputtering system investigated at room temperature. The ratio of the resistance change of the PCMO films with SRO buffer layers in the high-resistance state to that in the low-resistance state turned out to be much lager than that of the PCMO films without SRO buffer layers, Moreover, The reproducible property of the fabricated samples were improved. Origin of resistance change is not clear, but PCMO films with SRO buffer layers have the possibility of application for nonvolatile memory device.",
keywords = "Buffer layer, ReRAM, Resistance changes, SrRuO3",
author = "Seunawoo Han and Kyoungwan Park and Junghyun Sok",
year = "2007",
doi = "10.4028/3-908451-31-0.17",
language = "English",
isbn = "3908451310",
series = "Solid State Phenomena",
publisher = "Trans Tech Publications Ltd.",
number = "PART 1",
pages = "17--20",
booktitle = "Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia",
address = "Switzerland",
edition = "PART 1",
note = "IUMRS International Conference in Asia 2006, IUMRS-ICA 2006 ; Conference date: 10-09-2006 Through 14-09-2006",
}