Room temperature single electron effects in Si quantum dot memory with oxide-nitride tunneling dielectrics

Ilgweon Kim; Sangyeon Han; Hyungsik Kim; Jongho Lee; Bumho Choi; Sungwoo Hwang; Doyeol Ahn; Hyungcheol Shin

Room temperature single electron effects in Si quantum dot memory with oxide-nitride tunneling dielectrics

Ilgweon Kim, Sangyeon Han, Hyungsik Kim, Jongho Lee, Bumho Choi, Sungwoo Hwang, Doyeol Ahn, Hyungcheol Shin

School of Electrical and Computer Engineering

Korea Advanced Institute of Science and Technology

Research output: Contribution to journal › Conference article › peer-review

43 Scopus citations

Abstract

We have developed a repeatable process of forming uniform, small-size and high-density Si quantum dots on oxide-nitride tunneling dielectrics and have fabricated EEPROM which showed room temperature single electron effects. These prove the feasibility of practical Si quantum dot memory with ON film.

Original language	English
Pages (from-to)	111-114
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
State	Published - 1998
Event	Proceedings of the 1998 IEEE International Electron Devices Meeting - San Francisco, CA, USA Duration: 6 Dec 1998 → 9 Dec 1998

Cite this

@article{996b83d72ced44b4816d68c332d79c9a,

title = "Room temperature single electron effects in Si quantum dot memory with oxide-nitride tunneling dielectrics",

abstract = "We have developed a repeatable process of forming uniform, small-size and high-density Si quantum dots on oxide-nitride tunneling dielectrics and have fabricated EEPROM which showed room temperature single electron effects. These prove the feasibility of practical Si quantum dot memory with ON film.",

author = "Ilgweon Kim and Sangyeon Han and Hyungsik Kim and Jongho Lee and Bumho Choi and Sungwoo Hwang and Doyeol Ahn and Hyungcheol Shin",

year = "1998",

language = "English",

pages = "111--114",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1998 IEEE International Electron Devices Meeting ; Conference date: 06-12-1998 Through 09-12-1998",

}

TY - JOUR

T1 - Room temperature single electron effects in Si quantum dot memory with oxide-nitride tunneling dielectrics

AU - Kim, Ilgweon

AU - Han, Sangyeon

AU - Kim, Hyungsik

AU - Lee, Jongho

AU - Choi, Bumho

AU - Hwang, Sungwoo

AU - Ahn, Doyeol

AU - Shin, Hyungcheol

PY - 1998

Y1 - 1998

N2 - We have developed a repeatable process of forming uniform, small-size and high-density Si quantum dots on oxide-nitride tunneling dielectrics and have fabricated EEPROM which showed room temperature single electron effects. These prove the feasibility of practical Si quantum dot memory with ON film.

AB - We have developed a repeatable process of forming uniform, small-size and high-density Si quantum dots on oxide-nitride tunneling dielectrics and have fabricated EEPROM which showed room temperature single electron effects. These prove the feasibility of practical Si quantum dot memory with ON film.

UR - http://www.scopus.com/inward/record.url?scp=0032256628&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0032256628

SN - 0163-1918

SP - 111

EP - 114

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - Proceedings of the 1998 IEEE International Electron Devices Meeting

Y2 - 6 December 1998 through 9 December 1998

ER -

Room temperature single electron effects in Si quantum dot memory with oxide-nitride tunneling dielectrics

Abstract

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