Room temperature single electron effects in Si quantum dot memory with oxide-nitride tunneling dielectrics

Ilgweon Kim, Sangyeon Han, Hyungsik Kim, Jongho Lee, Bumho Choi, Sungwoo Hwang, Doyeol Ahn, Hyungcheol Shin

Research output: Contribution to journalConference articlepeer-review

42 Scopus citations

Abstract

We have developed a repeatable process of forming uniform, small-size and high-density Si quantum dots on oxide-nitride tunneling dielectrics and have fabricated EEPROM which showed room temperature single electron effects. These prove the feasibility of practical Si quantum dot memory with ON film.

Original languageEnglish
Pages (from-to)111-114
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - 1998
EventProceedings of the 1998 IEEE International Electron Devices Meeting - San Francisco, CA, USA
Duration: 6 Dec 19989 Dec 1998

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