Room temperature single electron effects in Si quantum dot memory with oxide-nitride tunneling dielectrics

Ilgweon Kim, Sangyeon Han, Hyungsik Kim, Jongho Lee, Bumho Choi, Sungwoo Hwang, Doyeol Ahn, Hyungcheol Shin

Research output: Contribution to journalConference articlepeer-review

43 Scopus citations

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