Room-temperature tensile creep of a PZT wafer in short and open-circuit conditions

Chang Hoan Lee, Soo Il Lee, Sang Joo Kim

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

A commercially available soft lead titanate zirconate (PZT) wafer that is poled in thickness direction is subjected to various magnitudes of constant longitudinal tensile stress. The evolutions of electric displacement in thickness direction and longitudinal strain over time are measured. The measured total responses are divided into linear responses, immediate switching-induced responses, and creep responses. It is found that immediate switching-induced responses can be described by stress power functions and creep responses by stress and time power laws, within the current range of tensile stress.

Original languageEnglish
Pages (from-to)158-162
Number of pages5
JournalJournal of the Ceramic Society of Japan
Volume116
Issue number1349
DOIs
StatePublished - Jan 2008

Keywords

  • Creep power law
  • Domain switching
  • PZT wafer
  • Tensile loading

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