Screening effects on the band-gap renormalization of strained InGaAs/InGaAsP quantum well lasers lattice matched to GaAs

Seoung Hwan Park; Doyeol Ahn

Screening effects on the band-gap renormalization of strained InGaAs/InGaAsP quantum well lasers lattice matched to GaAs

Seoung Hwan Park, Doyeol Ahn

School of Electrical and Computer Engineering

Catholic University of Daegu

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The screening effects on the band-gap renormalization (BGR) of strained InGaAs/InGaAsP (E_g=1.6 eV) QW lasers lattice matched to GaAs are investigated theoretically, taking into account the valence-band mixing and multisubband effects. These results are also compared with those of InGaAs/GaAs QW lasers. Without the screening effect, the BGR significantly depends on both the carrier density and the In composition. On the other hand, with the screening effect, these dependencies are expected to be reduced considerably. The BGR with the screening effect in InGaAs/GaAs lasers show weaker dependence on the In composition compared to InGaAs/InGaAsP lasers.

Original language	English
Pages (from-to)	1844
Number of pages	1
Journal	Applied Physics Letters
State	Published - 1995

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title = "Screening effects on the band-gap renormalization of strained InGaAs/InGaAsP quantum well lasers lattice matched to GaAs",

abstract = "The screening effects on the band-gap renormalization (BGR) of strained InGaAs/InGaAsP (Eg=1.6 eV) QW lasers lattice matched to GaAs are investigated theoretically, taking into account the valence-band mixing and multisubband effects. These results are also compared with those of InGaAs/GaAs QW lasers. Without the screening effect, the BGR significantly depends on both the carrier density and the In composition. On the other hand, with the screening effect, these dependencies are expected to be reduced considerably. The BGR with the screening effect in InGaAs/GaAs lasers show weaker dependence on the In composition compared to InGaAs/InGaAsP lasers.",

author = "Park, {Seoung Hwan} and Doyeol Ahn",

year = "1995",

language = "English",

pages = "1844",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Screening effects on the band-gap renormalization of strained InGaAs/InGaAsP quantum well lasers lattice matched to GaAs

AU - Park, Seoung Hwan

AU - Ahn, Doyeol

PY - 1995

Y1 - 1995

N2 - The screening effects on the band-gap renormalization (BGR) of strained InGaAs/InGaAsP (Eg=1.6 eV) QW lasers lattice matched to GaAs are investigated theoretically, taking into account the valence-band mixing and multisubband effects. These results are also compared with those of InGaAs/GaAs QW lasers. Without the screening effect, the BGR significantly depends on both the carrier density and the In composition. On the other hand, with the screening effect, these dependencies are expected to be reduced considerably. The BGR with the screening effect in InGaAs/GaAs lasers show weaker dependence on the In composition compared to InGaAs/InGaAsP lasers.

AB - The screening effects on the band-gap renormalization (BGR) of strained InGaAs/InGaAsP (Eg=1.6 eV) QW lasers lattice matched to GaAs are investigated theoretically, taking into account the valence-band mixing and multisubband effects. These results are also compared with those of InGaAs/GaAs QW lasers. Without the screening effect, the BGR significantly depends on both the carrier density and the In composition. On the other hand, with the screening effect, these dependencies are expected to be reduced considerably. The BGR with the screening effect in InGaAs/GaAs lasers show weaker dependence on the In composition compared to InGaAs/InGaAsP lasers.

UR - http://www.scopus.com/inward/record.url?scp=36449007336&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:36449007336

SN - 0003-6951

SP - 1844

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

Screening effects on the band-gap renormalization of strained InGaAs/InGaAsP quantum well lasers lattice matched to GaAs

Abstract

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