Selective growth of InAs quantum dots on patterned Si/SiO2 substrates

B. H. Choi, C. M. Park, S. H. Song, S. W. Hwang, B. D. Min, M. H. Son, D. Ahn, Y. J. Park, E. K. Kim, S. K. Min

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

There have been considerable efforts for the growth of InAs self-assembled quantum dots (QDs), and recently, many interesting works of selective growth on patterned substrates are under progress. Most of the works so far have been concentrated on the growth of QDs on GaAs substrates. On the other hand, the growth of InAs QDs on silicon substrates is expected to provide interesting growth mechanisms and new zero-dimensional states. We would like to present that InAs QDs are successfully grown on silicon substrates. The position control of QDs is also shown to be possible by utilizing patterned silicon/silicon dioxide (Si/SiO2) substrates.

Original languageEnglish
Title of host publicationDigest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages174-175
Number of pages2
ISBN (Electronic)4891140046, 9784891140045
DOIs
StatePublished - 2000
EventInternational Microprocesses and Nanotechnology Conference, MNC 2000 - Tokyo, Japan
Duration: 11 Jul 200013 Jul 2000

Publication series

NameDigest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000

Conference

ConferenceInternational Microprocesses and Nanotechnology Conference, MNC 2000
Country/TerritoryJapan
CityTokyo
Period11/07/0013/07/00

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