@inproceedings{9d6e42849c764a259eb21bd961b1e510,
title = "Selective growth of InAs quantum dots using AFM-patterned GaAs substrate",
abstract = "Fabrication of semiconductor quantum dots is of considerable importance for the study of low dimensional physics and for device applications. The growth of self-assembled quantum dots (SAQDs) in the Stranski-Krastanow mode has been attracting considerable interest, because direct one-step formation of ultra-small quantum dots is possible. Recently, many interesting works demonstrate selective growth of such SAQDs utilizing pre-patterned substrates. We have proposed and demonstrated simple nano-carving of GaAs substrates using the cantilever oscillations of an atomic force microscope (AFM). In the conference, we would like to present selective growth of InAs SAQDs on GaAs substrates, which are patterned by our AFM nano-carving technique. We will show that the position control of SAQDs is successfully obtained by adjusting the shape and the size of the AFM patterns.",
author = "Hyon, {C. K.} and Choi, {S. C.} and Song, {S. H.} and Hwang, {S. W.} and Min, {B. D.} and D. Ahn and Park, {Y. J.} and Kim, {E. K.}",
year = "2000",
doi = "10.1109/IMNC.2000.872736",
language = "English",
series = "Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "244--245",
booktitle = "Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000",
address = "United States",
note = "International Microprocesses and Nanotechnology Conference, MNC 2000 ; Conference date: 11-07-2000 Through 13-07-2000",
}