Selective growth of inas self-assembled quantum dots on nanopatterned SiO2/Si substrate

B. H. Choi; C. M. Park; S. H. Song; M. H. Son; S. W. Hwang; D. Ahn; E. K. Kim

doi:10.1063/1.1352049

Selective growth of inas self-assembled quantum dots on nanopatterned SiO₂/Si substrate

B. H. Choi, C. M. Park, S. H. Song, M. H. Son, S. W. Hwang, D. Ahn, E. K. Kim

School of Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

We report the selective growth of InAs self-assembled quantum dots (SAQDs) on silicon-dioxide/silicon (SiO₂/Si) substrates patterned in nanometer scale. The SiO₂ thin film is found to be an efficient mask material for prohibiting the growth of InAs SAQDs, while the formation of stable SAQDs is observed on the exposed surface of Si. We have utilized this selectivity to demonstrate almost one-dimensional alignment of InAs SAQDs on Si stripes. The crystallinity of SAQDs is also identified by high-resolution transmission electron microscope observation. Our study opens up a possibility of reliably integrating III-V quantum dot devices with conventional Si circuits,

Original language	English
Pages (from-to)	1403-1405
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	10
DOIs	https://doi.org/10.1063/1.1352049
State	Published - 5 Mar 2001

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title = "Selective growth of inas self-assembled quantum dots on nanopatterned SiO2/Si substrate",

abstract = "We report the selective growth of InAs self-assembled quantum dots (SAQDs) on silicon-dioxide/silicon (SiO2/Si) substrates patterned in nanometer scale. The SiO2 thin film is found to be an efficient mask material for prohibiting the growth of InAs SAQDs, while the formation of stable SAQDs is observed on the exposed surface of Si. We have utilized this selectivity to demonstrate almost one-dimensional alignment of InAs SAQDs on Si stripes. The crystallinity of SAQDs is also identified by high-resolution transmission electron microscope observation. Our study opens up a possibility of reliably integrating III-V quantum dot devices with conventional Si circuits,",

author = "Choi, {B. H.} and Park, {C. M.} and Song, {S. H.} and Son, {M. H.} and Hwang, {S. W.} and D. Ahn and Kim, {E. K.}",

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T1 - Selective growth of inas self-assembled quantum dots on nanopatterned SiO2/Si substrate

AU - Choi, B. H.

AU - Park, C. M.

AU - Song, S. H.

AU - Son, M. H.

AU - Hwang, S. W.

AU - Ahn, D.

AU - Kim, E. K.

PY - 2001/3/5

Y1 - 2001/3/5

N2 - We report the selective growth of InAs self-assembled quantum dots (SAQDs) on silicon-dioxide/silicon (SiO2/Si) substrates patterned in nanometer scale. The SiO2 thin film is found to be an efficient mask material for prohibiting the growth of InAs SAQDs, while the formation of stable SAQDs is observed on the exposed surface of Si. We have utilized this selectivity to demonstrate almost one-dimensional alignment of InAs SAQDs on Si stripes. The crystallinity of SAQDs is also identified by high-resolution transmission electron microscope observation. Our study opens up a possibility of reliably integrating III-V quantum dot devices with conventional Si circuits,

AB - We report the selective growth of InAs self-assembled quantum dots (SAQDs) on silicon-dioxide/silicon (SiO2/Si) substrates patterned in nanometer scale. The SiO2 thin film is found to be an efficient mask material for prohibiting the growth of InAs SAQDs, while the formation of stable SAQDs is observed on the exposed surface of Si. We have utilized this selectivity to demonstrate almost one-dimensional alignment of InAs SAQDs on Si stripes. The crystallinity of SAQDs is also identified by high-resolution transmission electron microscope observation. Our study opens up a possibility of reliably integrating III-V quantum dot devices with conventional Si circuits,

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DO - 10.1063/1.1352049

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SP - 1403

EP - 1405

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

ER -

Selective growth of inas self-assembled quantum dots on nanopatterned SiO₂/Si substrate

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