Self-compliant bipolar resistive switching in SiN-based resistive switching memory

Sungjun Kim, Yao Feng Chang, Min Hwi Kim, Tae Hyeon Kim, Yoon Kim, Byung Gook Park

Research output: Contribution to journalArticlepeer-review

18 Scopus citations


Here, we present evidence of self-compliant and self-rectifying bipolar resistive switching behavior in Ni/SiNx/n+ Si and Ni/SiNx/n++ Si resistive-switching random access memory devices. The Ni/SiNx/n++ Si device's Si bottom electrode had a higher dopant concentration (As ion > 1019 cm-3) than the Ni/SiNx/n+ Si device; both unipolar and bipolar resistive switching behaviors were observed for the higher dopant concentration device owing to a large current overshoot. Conversely, for the device with the lower dopant concentration (As ion < 1018 cm-3), self-rectification and self-compliance were achieved owing to the series resistance of the Si bottom electrode.

Original languageEnglish
Article number459
Issue number5
StatePublished - 2017


  • Memory
  • Resistive switching
  • Self-compliance
  • Silicon nitride


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