TY - GEN
T1 - Semi-analytical model of subthreshold current for macaroni channel MOSFET
AU - Nguyen-Gia, Quan
AU - Kang, Myounggon
AU - Jeon, Jongwook
AU - Shin, Hyungcheol
N1 - Publisher Copyright:
© 2021 IEEE. All rights reserved.
PY - 2021
Y1 - 2021
N2 - A semi-analytical expression for the current is derived based on the potential model for the macaroni channel MOSFET. The current model is verified with TCAD simulations by changing not only the geometric parameters such as radius, oxide thickness, and gate length, but also electron mobility, channel doping concentration, and drain-to-source bias.
AB - A semi-analytical expression for the current is derived based on the potential model for the macaroni channel MOSFET. The current model is verified with TCAD simulations by changing not only the geometric parameters such as radius, oxide thickness, and gate length, but also electron mobility, channel doping concentration, and drain-to-source bias.
UR - http://www.scopus.com/inward/record.url?scp=85124888487&partnerID=8YFLogxK
U2 - 10.1109/SNW51795.2021.00011
DO - 10.1109/SNW51795.2021.00011
M3 - Conference contribution
AN - SCOPUS:85124888487
T3 - 2021 Silicon Nanoelectronics Workshop, SNW 2021
BT - 2021 Silicon Nanoelectronics Workshop, SNW 2021
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 26th Silicon Nanoelectronics Workshop, SNW 2021
Y2 - 13 June 2021
ER -