Separate extraction of gate resistance components in RF MOSFETs

Myounggon Kang; In Man Kang; Young Ho Jung; Hyungcheol Shin

doi:10.1109/TED.2007.896361

Separate extraction of gate resistance components in RF MOSFETs

Myounggon Kang, In Man Kang, Young Ho Jung, Hyungcheol Shin

School of Advanced Fusion Studies

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

A simple and accurate method is presented for extraction of the gate resistance components of RF MOSFETs. Both the gate electrode resistance and the channel resistance were extracted separately. Also, the gate electrode resistance was separated into an external component and an internal component. The gate electrode resistance was extracted at off state, and the channel resistance was extracted with at on state. The simple extraction methodology is applied to extract parameters from the measured S-parameters of RF MOSFETs that are fabricated with 130-nm CMOS technology.

Original language	English
Pages (from-to)	1459-1463
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	54
Issue number	6
DOIs	https://doi.org/10.1109/TED.2007.896361
State	Published - Jun 2007

Keywords

Channel resistance
Electrode resistance
Gate resistance
Modeling
Parameter extraction
Radio-frequency MOSFETs (RF MOSFETs)

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10.1109/TED.2007.896361

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abstract = "A simple and accurate method is presented for extraction of the gate resistance components of RF MOSFETs. Both the gate electrode resistance and the channel resistance were extracted separately. Also, the gate electrode resistance was separated into an external component and an internal component. The gate electrode resistance was extracted at off state, and the channel resistance was extracted with at on state. The simple extraction methodology is applied to extract parameters from the measured S-parameters of RF MOSFETs that are fabricated with 130-nm CMOS technology.",

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AU - Kang, Myounggon

AU - Kang, In Man

AU - Jung, Young Ho

AU - Shin, Hyungcheol

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AB - A simple and accurate method is presented for extraction of the gate resistance components of RF MOSFETs. Both the gate electrode resistance and the channel resistance were extracted separately. Also, the gate electrode resistance was separated into an external component and an internal component. The gate electrode resistance was extracted at off state, and the channel resistance was extracted with at on state. The simple extraction methodology is applied to extract parameters from the measured S-parameters of RF MOSFETs that are fabricated with 130-nm CMOS technology.

KW - Channel resistance

KW - Electrode resistance

KW - Gate resistance

KW - Modeling

KW - Parameter extraction

KW - Radio-frequency MOSFETs (RF MOSFETs)

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 6

ER -

Separate extraction of gate resistance components in RF MOSFETs

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Keywords

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