Short- and Long-Term Memory Based on a Floating-Gate IGZO Synaptic Transistor

Dongyeon Kang; Wonjung Kim; Jun Tae Jang; Changwook Kim; Jung Nam Kim; Sung Jin Choi; Jong Ho Bae; Dong Myong Kim; Yoon Kim; Dae Hwan Kim

doi:10.1109/ACCESS.2023.3249479

Short- and Long-Term Memory Based on a Floating-Gate IGZO Synaptic Transistor

Dongyeon Kang, Wonjung Kim, Jun Tae Jang, Changwook Kim, Jung Nam Kim, Sung Jin Choi, Jong Ho Bae, Dong Myong Kim, Yoon Kim, Dae Hwan Kim

School of Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Short- and long-term neuroplasticity behaviors are key mechanisms for various activities. In this paper, we propose a synaptic transistor with a floating-gate (FG) node and an amorphous InGaZnO (IGZO) channel layer. The proposed device emulates the neuroplasticity functions of both short-term memory (STM) and long-term memory (LTM) through the control of the amplitude and the number of input pulses. The STM operated by ion movement in the gate dielectrics occurs when the input amplitude is relatively small (< 9 V). The LTM operated through the storage of electrons in the FG occurs when the input amplitude is relatively large (>10 V). In addition, as the number of input pulses increases, information is stored for a longer time. Our FG IGZO synaptic transistor could be a promising device solution for brain-inspired computing systems.

Original language	English
Pages (from-to)	20196-20201
Number of pages	6
Journal	IEEE Access
Volume	11
DOIs	https://doi.org/10.1109/ACCESS.2023.3249479
State	Published - 2023

Keywords

IGZO
Synapse device
long-term memory
neuromorphic system
short-term memory
synaptic transistor

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10.1109/ACCESS.2023.3249479

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title = "Short- and Long-Term Memory Based on a Floating-Gate IGZO Synaptic Transistor",

abstract = "Short- and long-term neuroplasticity behaviors are key mechanisms for various activities. In this paper, we propose a synaptic transistor with a floating-gate (FG) node and an amorphous InGaZnO (IGZO) channel layer. The proposed device emulates the neuroplasticity functions of both short-term memory (STM) and long-term memory (LTM) through the control of the amplitude and the number of input pulses. The STM operated by ion movement in the gate dielectrics occurs when the input amplitude is relatively small (< 9 V). The LTM operated through the storage of electrons in the FG occurs when the input amplitude is relatively large (>10 V). In addition, as the number of input pulses increases, information is stored for a longer time. Our FG IGZO synaptic transistor could be a promising device solution for brain-inspired computing systems.",

keywords = "IGZO, Synapse device, long-term memory, neuromorphic system, short-term memory, synaptic transistor",

author = "Dongyeon Kang and Wonjung Kim and Jang, {Jun Tae} and Changwook Kim and Kim, {Jung Nam} and Choi, {Sung Jin} and Bae, {Jong Ho} and Kim, {Dong Myong} and Yoon Kim and Kim, {Dae Hwan}",

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year = "2023",

doi = "10.1109/ACCESS.2023.3249479",

language = "English",

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pages = "20196--20201",

journal = "IEEE Access",

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AU - Kang, Dongyeon

AU - Kim, Wonjung

AU - Jang, Jun Tae

AU - Kim, Changwook

AU - Kim, Jung Nam

AU - Choi, Sung Jin

AU - Bae, Jong Ho

AU - Kim, Dong Myong

AU - Kim, Yoon

AU - Kim, Dae Hwan

PY - 2023

Y1 - 2023

N2 - Short- and long-term neuroplasticity behaviors are key mechanisms for various activities. In this paper, we propose a synaptic transistor with a floating-gate (FG) node and an amorphous InGaZnO (IGZO) channel layer. The proposed device emulates the neuroplasticity functions of both short-term memory (STM) and long-term memory (LTM) through the control of the amplitude and the number of input pulses. The STM operated by ion movement in the gate dielectrics occurs when the input amplitude is relatively small (< 9 V). The LTM operated through the storage of electrons in the FG occurs when the input amplitude is relatively large (>10 V). In addition, as the number of input pulses increases, information is stored for a longer time. Our FG IGZO synaptic transistor could be a promising device solution for brain-inspired computing systems.

AB - Short- and long-term neuroplasticity behaviors are key mechanisms for various activities. In this paper, we propose a synaptic transistor with a floating-gate (FG) node and an amorphous InGaZnO (IGZO) channel layer. The proposed device emulates the neuroplasticity functions of both short-term memory (STM) and long-term memory (LTM) through the control of the amplitude and the number of input pulses. The STM operated by ion movement in the gate dielectrics occurs when the input amplitude is relatively small (< 9 V). The LTM operated through the storage of electrons in the FG occurs when the input amplitude is relatively large (>10 V). In addition, as the number of input pulses increases, information is stored for a longer time. Our FG IGZO synaptic transistor could be a promising device solution for brain-inspired computing systems.

KW - IGZO

KW - Synapse device

KW - long-term memory

KW - neuromorphic system

KW - short-term memory

KW - synaptic transistor

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SP - 20196

EP - 20201

JO - IEEE Access

JF - IEEE Access

ER -

Short- and Long-Term Memory Based on a Floating-Gate IGZO Synaptic Transistor

Abstract

Keywords

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