Si nanocluster growth using a digital gas-feeding method in the LPCVD system and its charge storage effect

Chan Park; Kyoungmin Kim; Eunkyeom Kim; Junghyun Sok; Kyoungwan Park; Moonsup Han

doi:10.1016/j.mseb.2007.04.009

Si nanocluster growth using a digital gas-feeding method in the LPCVD system and its charge storage effect

Chan Park, Kyoungmin Kim, Eunkyeom Kim, Junghyun Sok, Kyoungwan Park, Moonsup Han

Department of Physics

University of Seoul

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The density and size of Si nanoclusters were controlled by using a newly suggested digital gas-feeding method with Si₂H₆ source gas in a low pressure chemical vapor deposition system. The density of the Si nanoclusters increased and the size slightly changed based on the frequency of gas pulse feeding in the digital process. A new process was used in the fabrication of the Si nanocluster floating gate memory structures, which allowed the maximum program window of 6 V to be achieved. It was also found that the program window could be easily controlled through the frequency of gas pulse feeding in the Si nanocluster formation.

Original language	English
Pages (from-to)	103-108
Number of pages	6
Journal	Materials Science and Engineering: B
Volume	140
Issue number	1-2
DOIs	https://doi.org/10.1016/j.mseb.2007.04.009
State	Published - 25 May 2007

Keywords

Electron/hole charging
Low pressure chemical vapor deposition
Nonvolatile memory
Program window
Si nanoclusters
Storage nodes

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10.1016/j.mseb.2007.04.009

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title = "Si nanocluster growth using a digital gas-feeding method in the LPCVD system and its charge storage effect",

abstract = "The density and size of Si nanoclusters were controlled by using a newly suggested digital gas-feeding method with Si2H6 source gas in a low pressure chemical vapor deposition system. The density of the Si nanoclusters increased and the size slightly changed based on the frequency of gas pulse feeding in the digital process. A new process was used in the fabrication of the Si nanocluster floating gate memory structures, which allowed the maximum program window of 6 V to be achieved. It was also found that the program window could be easily controlled through the frequency of gas pulse feeding in the Si nanocluster formation.",

keywords = "Electron/hole charging, Low pressure chemical vapor deposition, Nonvolatile memory, Program window, Si nanoclusters, Storage nodes",

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AU - Park, Chan

AU - Kim, Kyoungmin

AU - Kim, Eunkyeom

AU - Sok, Junghyun

AU - Park, Kyoungwan

AU - Han, Moonsup

PY - 2007/5/25

Y1 - 2007/5/25

N2 - The density and size of Si nanoclusters were controlled by using a newly suggested digital gas-feeding method with Si2H6 source gas in a low pressure chemical vapor deposition system. The density of the Si nanoclusters increased and the size slightly changed based on the frequency of gas pulse feeding in the digital process. A new process was used in the fabrication of the Si nanocluster floating gate memory structures, which allowed the maximum program window of 6 V to be achieved. It was also found that the program window could be easily controlled through the frequency of gas pulse feeding in the Si nanocluster formation.

AB - The density and size of Si nanoclusters were controlled by using a newly suggested digital gas-feeding method with Si2H6 source gas in a low pressure chemical vapor deposition system. The density of the Si nanoclusters increased and the size slightly changed based on the frequency of gas pulse feeding in the digital process. A new process was used in the fabrication of the Si nanocluster floating gate memory structures, which allowed the maximum program window of 6 V to be achieved. It was also found that the program window could be easily controlled through the frequency of gas pulse feeding in the Si nanocluster formation.

KW - Electron/hole charging

KW - Low pressure chemical vapor deposition

KW - Nonvolatile memory

KW - Program window

KW - Si nanoclusters

KW - Storage nodes

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ER -

Si nanocluster growth using a digital gas-feeding method in the LPCVD system and its charge storage effect

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Keywords

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