Si single-electron transistors with sidewall depletion gates and their application to dynamic single-electron transistor logic

Si single-electron transistors with sidewall depletion gates on a silicon-on-insulator nanowire are proposed and fabricated, using the combination of the conventional lithography and process technology. The size dependence of device characteristics shows good controllability and reproducibility, and a dynamic multi-functional SET logic is successfully demonstrated at 10 K, for the first time.