Signal Readout in a-Si:H Pixel Detectors

Gyuseong Cho, J. S. Drewery, W. S. Hong, T. Jing, S. N. Kaplan, H. Lee, A. Mireshghi, V. Perez-Mendez, D. Wildermuth

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

Amorphous- or polysilicon thin-film technology can be used to make readout electronics for large-area a-Si:H pixel detectors. A switch consisting of two a-Si:H p-i-n diodes was studied to readout signals from pixels for the imaging of X-ray or gamma ray distributions. A charge storage time of 20 msec and a readout time of 0.7 μsec were achieved. For the detection of single ionizing particles, polysilicon thin-film-transistor amplifiers can be integrated to amplify the small signals at the pixel level before readout. Prototype polysilicon TFT amplifiers were designed and fabricated. The measured gain-bandwidth product was ~300 MHz and the input equivalent noise charge was ~1000 electrons for a 1 μsec shaping time.

Original languageEnglish
Pages (from-to)323-327
Number of pages5
JournalIEEE Transactions on Nuclear Science
Volume40
Issue number4
DOIs
StatePublished - Aug 1993

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