Silicon etching characteristics for tetramethylammonium hydroxide-based solution with additives

Ki Wha Jun; Byung Min Kim; Jung Sik Kim

doi:10.1049/mnl.2015.0161

Silicon etching characteristics for tetramethylammonium hydroxide-based solution with additives

Ki Wha Jun, Byung Min Kim, Jung Sik Kim

Department of Materials Science and Engineering

University of Seoul

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

In this reported work, the anisotropic etching properties of single-crystal silicon with tetramethylammonium hydroxide (TMAH) solution are examined in detail. The variations in the Si etching rate and surface morphology at different etching temperatures and TMAH concentrations are evaluated. The effect of isopropyl alcohol (IPA) additive is also examined. As the TMAH concentration (10-25 wt%) decreased, the etching rate increased from 10 to 70 μm/h at temperatures between 70 and 90°C. On the other hand, the etched surface roughness became degraded as the hillock density and corner undercut ratio increased. The additive of IPA affected the morphology of the etched surface to be flat. In addition, the IPA additive improved the etched surface significantly by decreasing the hillock density on the surface.

Original language	English
Pages (from-to)	487-490
Number of pages	4
Journal	Micro and Nano Letters
Volume	10
Issue number	10
DOIs	https://doi.org/10.1049/mnl.2015.0161
State	Published - 1 Oct 2015

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title = "Silicon etching characteristics for tetramethylammonium hydroxide-based solution with additives",

abstract = "In this reported work, the anisotropic etching properties of single-crystal silicon with tetramethylammonium hydroxide (TMAH) solution are examined in detail. The variations in the Si etching rate and surface morphology at different etching temperatures and TMAH concentrations are evaluated. The effect of isopropyl alcohol (IPA) additive is also examined. As the TMAH concentration (10-25 wt%) decreased, the etching rate increased from 10 to 70 μm/h at temperatures between 70 and 90°C. On the other hand, the etched surface roughness became degraded as the hillock density and corner undercut ratio increased. The additive of IPA affected the morphology of the etched surface to be flat. In addition, the IPA additive improved the etched surface significantly by decreasing the hillock density on the surface.",

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N2 - In this reported work, the anisotropic etching properties of single-crystal silicon with tetramethylammonium hydroxide (TMAH) solution are examined in detail. The variations in the Si etching rate and surface morphology at different etching temperatures and TMAH concentrations are evaluated. The effect of isopropyl alcohol (IPA) additive is also examined. As the TMAH concentration (10-25 wt%) decreased, the etching rate increased from 10 to 70 μm/h at temperatures between 70 and 90°C. On the other hand, the etched surface roughness became degraded as the hillock density and corner undercut ratio increased. The additive of IPA affected the morphology of the etched surface to be flat. In addition, the IPA additive improved the etched surface significantly by decreasing the hillock density on the surface.

AB - In this reported work, the anisotropic etching properties of single-crystal silicon with tetramethylammonium hydroxide (TMAH) solution are examined in detail. The variations in the Si etching rate and surface morphology at different etching temperatures and TMAH concentrations are evaluated. The effect of isopropyl alcohol (IPA) additive is also examined. As the TMAH concentration (10-25 wt%) decreased, the etching rate increased from 10 to 70 μm/h at temperatures between 70 and 90°C. On the other hand, the etched surface roughness became degraded as the hillock density and corner undercut ratio increased. The additive of IPA affected the morphology of the etched surface to be flat. In addition, the IPA additive improved the etched surface significantly by decreasing the hillock density on the surface.

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Silicon etching characteristics for tetramethylammonium hydroxide-based solution with additives

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