Silicon etching characteristics for the TMAH based solution with additives

Ki Wha Jun; Jung Sik Kim

doi:10.1109/NEMS.2015.7147479

Silicon etching characteristics for the TMAH based solution with additives

Ki Wha Jun, Jung Sik Kim

Department of Materials Science and Engineering

University of Seoul

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this study, the anisotropic etching properties of single crystal silicon were examined using the TMAH solution. The effect of IPA additive was also examined. As the THAM concentration (10∼25 wt.%) decreased, the etching rate increased from 10 μm/h to 70 μm/h at temperatures between 70 and 90°C. On the other hand, the etched surface roughness became degraded as the hillock density and corner undercut ratio increased. Additive of IPA affected the morphology of the etched surface to be flat. Also, the PA additive improved the etched surface significantly by decreasing the hillock density on the surface.

Original language	English
Title of host publication	2015 IEEE 10th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	507-510
Number of pages	4
ISBN (Electronic)	9781467366953
DOIs	https://doi.org/10.1109/NEMS.2015.7147479
State	Published - 1 Jul 2015
Event	10th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015 - Xi'an, China Duration: 7 Apr 2015 → 11 Apr 2015

Publication series

Name	2015 IEEE 10th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015

Conference

Conference	10th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015
Country/Territory	China
City	Xi'an
Period	7/04/15 → 11/04/15

Access to Document

10.1109/NEMS.2015.7147479

Cite this

Jun, K. W., & Kim, J. S. (2015). Silicon etching characteristics for the TMAH based solution with additives. In 2015 IEEE 10th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015 (pp. 507-510). Article 7147479 (2015 IEEE 10th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NEMS.2015.7147479

Jun, Ki Wha ; Kim, Jung Sik. / Silicon etching characteristics for the TMAH based solution with additives. 2015 IEEE 10th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 507-510 (2015 IEEE 10th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015).

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title = "Silicon etching characteristics for the TMAH based solution with additives",

abstract = "In this study, the anisotropic etching properties of single crystal silicon were examined using the TMAH solution. The effect of IPA additive was also examined. As the THAM concentration (10∼25 wt.%) decreased, the etching rate increased from 10 μm/h to 70 μm/h at temperatures between 70 and 90°C. On the other hand, the etched surface roughness became degraded as the hillock density and corner undercut ratio increased. Additive of IPA affected the morphology of the etched surface to be flat. Also, the PA additive improved the etched surface significantly by decreasing the hillock density on the surface.",

author = "Jun, {Ki Wha} and Kim, {Jung Sik}",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 10th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015 ; Conference date: 07-04-2015 Through 11-04-2015",

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doi = "10.1109/NEMS.2015.7147479",

language = "English",

series = "2015 IEEE 10th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015",

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Jun, KW & Kim, JS 2015, Silicon etching characteristics for the TMAH based solution with additives. in 2015 IEEE 10th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015., 7147479, 2015 IEEE 10th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015, Institute of Electrical and Electronics Engineers Inc., pp. 507-510, 10th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015, Xi'an, China, 7/04/15. https://doi.org/10.1109/NEMS.2015.7147479

Silicon etching characteristics for the TMAH based solution with additives. / Jun, Ki Wha; Kim, Jung Sik.
2015 IEEE 10th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 507-510 7147479 (2015 IEEE 10th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - In this study, the anisotropic etching properties of single crystal silicon were examined using the TMAH solution. The effect of IPA additive was also examined. As the THAM concentration (10∼25 wt.%) decreased, the etching rate increased from 10 μm/h to 70 μm/h at temperatures between 70 and 90°C. On the other hand, the etched surface roughness became degraded as the hillock density and corner undercut ratio increased. Additive of IPA affected the morphology of the etched surface to be flat. Also, the PA additive improved the etched surface significantly by decreasing the hillock density on the surface.

AB - In this study, the anisotropic etching properties of single crystal silicon were examined using the TMAH solution. The effect of IPA additive was also examined. As the THAM concentration (10∼25 wt.%) decreased, the etching rate increased from 10 μm/h to 70 μm/h at temperatures between 70 and 90°C. On the other hand, the etched surface roughness became degraded as the hillock density and corner undercut ratio increased. Additive of IPA affected the morphology of the etched surface to be flat. Also, the PA additive improved the etched surface significantly by decreasing the hillock density on the surface.

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Jun KW, Kim JS. Silicon etching characteristics for the TMAH based solution with additives. In 2015 IEEE 10th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 507-510. 7147479. (2015 IEEE 10th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015). doi: 10.1109/NEMS.2015.7147479

Silicon etching characteristics for the TMAH based solution with additives

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