TY - GEN
T1 - Silicon nanocluster formation by a pulse-type gas feeding technique in the LPCVD system for the nonvolatile memory applications
AU - Kim, Kyongmin
AU - Kim, Eunkyeom
AU - Bae, Myeongwook
AU - Son, Daeho
AU - Lee, Juhyung
AU - Han, Moonsup
AU - Sok, Junghyun
AU - Park, Kyoungwan
PY - 2007
Y1 - 2007
N2 - We developed a pulse-type gas-feeding technique in low pressure chemical vapor deposition system in order to grow Si nanoclusters with high density and uniform size. The maximum density and average size of the Si nanoclusters were 7 × 1011/cm2 and 7 nm, respectively. Floating gate memory devices containing the storage node of the Si nanoclusters were fabricated. The memory window was 4.5 V when the writing and erasing voltages were +14 V and -18 V, respectively. The writing and erasing times were measured to be 1 ms and 200 ms, respectively. The retention time of Si nanocluster nonvolatile memory was estimated about 10 years.
AB - We developed a pulse-type gas-feeding technique in low pressure chemical vapor deposition system in order to grow Si nanoclusters with high density and uniform size. The maximum density and average size of the Si nanoclusters were 7 × 1011/cm2 and 7 nm, respectively. Floating gate memory devices containing the storage node of the Si nanoclusters were fabricated. The memory window was 4.5 V when the writing and erasing voltages were +14 V and -18 V, respectively. The writing and erasing times were measured to be 1 ms and 200 ms, respectively. The retention time of Si nanocluster nonvolatile memory was estimated about 10 years.
UR - http://www.scopus.com/inward/record.url?scp=38549178357&partnerID=8YFLogxK
U2 - 10.1557/proc-0997-i03-04
DO - 10.1557/proc-0997-i03-04
M3 - Conference contribution
AN - SCOPUS:38549178357
SN - 9781558999572
T3 - Materials Research Society Symposium Proceedings
SP - 101
EP - 105
BT - 2007 MRS Spring Meeting
PB - Materials Research Society
T2 - 2007 MRS Spring Meeting
Y2 - 10 April 2007 through 13 April 2007
ER -