Silicon nanocluster formation by a pulse-type gas feeding technique in the LPCVD system for the nonvolatile memory applications

Kyongmin Kim, Eunkyeom Kim, Myeongwook Bae, Daeho Son, Juhyung Lee, Moonsup Han, Junghyun Sok, Kyoungwan Park

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We developed a pulse-type gas-feeding technique in low pressure chemical vapor deposition system in order to grow Si nanoclusters with high density and uniform size. The maximum density and average size of the Si nanoclusters were 7 × 1011/cm2 and 7 nm, respectively. Floating gate memory devices containing the storage node of the Si nanoclusters were fabricated. The memory window was 4.5 V when the writing and erasing voltages were +14 V and -18 V, respectively. The writing and erasing times were measured to be 1 ms and 200 ms, respectively. The retention time of Si nanocluster nonvolatile memory was estimated about 10 years.

Original languageEnglish
Title of host publication2007 MRS Spring Meeting
PublisherMaterials Research Society
Pages101-105
Number of pages5
ISBN (Print)9781558999572
DOIs
StatePublished - 2007
Event2007 MRS Spring Meeting - San Francisco, CA, United States
Duration: 10 Apr 200713 Apr 2007

Publication series

NameMaterials Research Society Symposium Proceedings
Volume997
ISSN (Print)0272-9172

Conference

Conference2007 MRS Spring Meeting
Country/TerritoryUnited States
CitySan Francisco, CA
Period10/04/0713/04/07

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