TY - GEN
T1 - Silicon-on-insulator (SOI) integration for organic field effect transistor (OFET) based circuits
AU - Özgün, Recep
AU - Jung, Byung J.
AU - Dhar, Bal M.
AU - Katz, Howard E.
AU - Andreou, Andreas G.
PY - 2011
Y1 - 2011
N2 - In this paper, we report the first silicon-on-insulator (SOI) integration technique for organic field effect transistor (OFET) based circuits. Proposed design flow relies on only basic micro-fabrication processes such as photolithography and physical vapor deposition. This novel fabrication technique allows patterning of conductive silicon gate islands on the subtrate and eases the via and interconnect patterning and deposition for a bottom-gate OFET configuration. We fabricated p- and n-type transistors, and proof of concept OFET-based complementary circuits such as inverter and NAND-gate. Fabricated CMOS inverters have full rail-to-rail swing, very high gain (up to 58.3 at 60V, and 18.1 at 20V supply voltages), and outstanding noise margins of around 21V symmetric for NMHIGH and NMLOW at 60V supply voltage.
AB - In this paper, we report the first silicon-on-insulator (SOI) integration technique for organic field effect transistor (OFET) based circuits. Proposed design flow relies on only basic micro-fabrication processes such as photolithography and physical vapor deposition. This novel fabrication technique allows patterning of conductive silicon gate islands on the subtrate and eases the via and interconnect patterning and deposition for a bottom-gate OFET configuration. We fabricated p- and n-type transistors, and proof of concept OFET-based complementary circuits such as inverter and NAND-gate. Fabricated CMOS inverters have full rail-to-rail swing, very high gain (up to 58.3 at 60V, and 18.1 at 20V supply voltages), and outstanding noise margins of around 21V symmetric for NMHIGH and NMLOW at 60V supply voltage.
UR - http://www.scopus.com/inward/record.url?scp=79960877396&partnerID=8YFLogxK
U2 - 10.1109/ISCAS.2011.5938050
DO - 10.1109/ISCAS.2011.5938050
M3 - Conference contribution
AN - SCOPUS:79960877396
SN - 9781424494736
T3 - Proceedings - IEEE International Symposium on Circuits and Systems
SP - 2253
EP - 2256
BT - 2011 IEEE International Symposium of Circuits and Systems, ISCAS 2011
T2 - 2011 IEEE International Symposium of Circuits and Systems, ISCAS 2011
Y2 - 15 May 2011 through 18 May 2011
ER -