Simulation studies on guard ring effects on edge breakdown suppression of InGaAs/InP avalanche photodiodes

Seoung Hwan Park; Chan Yong Park; Doyeol Ahn

doi:10.7567/JJAP.57.106506

Simulation studies on guard ring effects on edge breakdown suppression of InGaAs/InP avalanche photodiodes

Seoung Hwan Park, Chan Yong Park, Doyeol Ahn

School of Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The breakdown characteristics of InGaAs/InP avalanche photodiodes (APDs) are investigated theoretically as a function of structural parameters of a guard ring. The difference between electric fields in the center and edge regions greatly increases with increasing distance (d) between the p⁺-InP contact and the floating guard ring. As a result, the edge breakdown can be reduced using a floating guard ring with d = 0.3-0.8 μm. However, we observe that the reduction effect of the breakdown voltage caused by the adjustment of the doping concentration or junction position is not large, compared with that by the distance d.

Original language	English
Article number	106506
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	57
Issue number	10
DOIs	https://doi.org/10.7567/JJAP.57.106506
State	Published - Oct 2018

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title = "Simulation studies on guard ring effects on edge breakdown suppression of InGaAs/InP avalanche photodiodes",

abstract = "The breakdown characteristics of InGaAs/InP avalanche photodiodes (APDs) are investigated theoretically as a function of structural parameters of a guard ring. The difference between electric fields in the center and edge regions greatly increases with increasing distance (d) between the p+-InP contact and the floating guard ring. As a result, the edge breakdown can be reduced using a floating guard ring with d = 0.3-0.8 μm. However, we observe that the reduction effect of the breakdown voltage caused by the adjustment of the doping concentration or junction position is not large, compared with that by the distance d.",

author = "Park, {Seoung Hwan} and Park, {Chan Yong} and Doyeol Ahn",

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AU - Park, Seoung Hwan

AU - Park, Chan Yong

AU - Ahn, Doyeol

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N2 - The breakdown characteristics of InGaAs/InP avalanche photodiodes (APDs) are investigated theoretically as a function of structural parameters of a guard ring. The difference between electric fields in the center and edge regions greatly increases with increasing distance (d) between the p+-InP contact and the floating guard ring. As a result, the edge breakdown can be reduced using a floating guard ring with d = 0.3-0.8 μm. However, we observe that the reduction effect of the breakdown voltage caused by the adjustment of the doping concentration or junction position is not large, compared with that by the distance d.

AB - The breakdown characteristics of InGaAs/InP avalanche photodiodes (APDs) are investigated theoretically as a function of structural parameters of a guard ring. The difference between electric fields in the center and edge regions greatly increases with increasing distance (d) between the p+-InP contact and the floating guard ring. As a result, the edge breakdown can be reduced using a floating guard ring with d = 0.3-0.8 μm. However, we observe that the reduction effect of the breakdown voltage caused by the adjustment of the doping concentration or junction position is not large, compared with that by the distance d.

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IS - 10

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ER -

Simulation studies on guard ring effects on edge breakdown suppression of InGaAs/InP avalanche photodiodes

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