Single electron memory with silicon self-assembled quantum-dots

Y. S. Yu; B. H. Choi; J. H. Oh; S. W. Hwang; D. Ahn

Single electron memory with silicon self-assembled quantum-dots

Y. S. Yu, B. H. Choi, J. H. Oh, S. W. Hwang, D. Ahn

School of Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

In this paper, we propose a new single electron memory cell structure incorporating quasi one-dimensional array of Si self-assembled quantum-dots (SAQDs). The simulation results show acceptable memory operation even though there are random distributions in the size and in the position of the SAQDs in the cell.

Original language	English
Pages (from-to)	S27-S29
Journal	Journal of the Korean Physical Society
Volume	39
Issue number	SUPPL. Part 1
State	Published - Dec 2001

Cite this

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title = "Single electron memory with silicon self-assembled quantum-dots",

abstract = "In this paper, we propose a new single electron memory cell structure incorporating quasi one-dimensional array of Si self-assembled quantum-dots (SAQDs). The simulation results show acceptable memory operation even though there are random distributions in the size and in the position of the SAQDs in the cell.",

author = "Yu, {Y. S.} and Choi, {B. H.} and Oh, {J. H.} and Hwang, {S. W.} and D. Ahn",

year = "2001",

month = dec,

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T1 - Single electron memory with silicon self-assembled quantum-dots

AU - Yu, Y. S.

AU - Choi, B. H.

AU - Oh, J. H.

AU - Hwang, S. W.

AU - Ahn, D.

PY - 2001/12

Y1 - 2001/12

N2 - In this paper, we propose a new single electron memory cell structure incorporating quasi one-dimensional array of Si self-assembled quantum-dots (SAQDs). The simulation results show acceptable memory operation even though there are random distributions in the size and in the position of the SAQDs in the cell.

AB - In this paper, we propose a new single electron memory cell structure incorporating quasi one-dimensional array of Si self-assembled quantum-dots (SAQDs). The simulation results show acceptable memory operation even though there are random distributions in the size and in the position of the SAQDs in the cell.

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M3 - Article

AN - SCOPUS:0035542231

SN - 0374-4884

VL - 39

SP - S27-S29

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - SUPPL. Part 1

ER -

Single electron memory with silicon self-assembled quantum-dots

Abstract

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