Single electron memory with silicon self-assembled quantum-dots

Y. S. Yu, B. H. Choi, J. H. Oh, S. W. Hwang, D. Ahn

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


In this paper, we propose a new single electron memory cell structure incorporating quasi one-dimensional array of Si self-assembled quantum-dots (SAQDs). The simulation results show acceptable memory operation even though there are random distributions in the size and in the position of the SAQDs in the cell.

Original languageEnglish
Pages (from-to)S27-S29
JournalJournal of the Korean Physical Society
Issue numberSUPPL. Part 1
StatePublished - Dec 2001


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