Single-electron transport in GaAs/AIGaAs nano-in-plane-gate transistors

S. H. Son, Y. S. Choi, K. H. Cho, S. W. Hwang, J. I. Lee, Y. J. Park, Y. S. Yu, D. Ahn

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


We report the fabrication and characterization of two different in-plane-gate transistors made from a GaAs/AlGaAs two-dimensional electron system, The first transistor is depletion mode and the second one is enhancement mode. These two modes are distinguished by the fabricated channel width. Transport measurements at room temperature (T) of these devices show the depletionmode and enhancement-mode-field-effect-transistor characteristics, respectively. The drain current-gate bias (I DS-V CG1) measurements of both transistors at a low temperature (T = 4.2 K) exhibit Coulomb oscillations. Moreover, I DS-V CG1 characteristics of the enhancement mode device can be reproduced by a double dot in series model.

Original languageEnglish
Pages (from-to)S517-S521
JournalJournal of the Korean Physical Society
Issue numberSUPPL. 3
StatePublished - Nov 2005


  • Enhancement mode
  • GaAs/AlGaAs HEMT
  • In-pane-gate transistor
  • Single-electron transport


Dive into the research topics of 'Single-electron transport in GaAs/AIGaAs nano-in-plane-gate transistors'. Together they form a unique fingerprint.

Cite this