Single-electron tunneling in silicon-on-insulator nano-wire transistors

K. H. Cho; S. H. Son; S. H. Hong; B. C. Kim; S. W. Hwang; D. Ahn; B. G. Park; B. Naser; J. F. Lin; J. P. Bird; D. K. Ferry

doi:10.1016/j.spmi.2004.03.015

Single-electron tunneling in silicon-on-insulator nano-wire transistors

K. H. Cho, S. H. Son, S. H. Hong, B. C. Kim, S. W. Hwang, D. Ahn, B. G. Park, B. Naser, J. F. Lin, J. P. Bird, D. K. Ferry

School of Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The gate bias dependent evolution of the Coulomb oscillations in a silicon-on-insulator nano-wire transistor is reported. Transport data obtained for a wide range of front- and back-gate bias strongly suggest that multiple quantum dots (QDs) with different potential depths are formed in the nano-wire channel. Our data can be clearly interpreted as arising from the turning on or off of one of these QDs as the back-gate bias is varied. Quantitative calculation based on the model of single-electron tunneling through two parallel QDs is in reasonable agreement with the measured data in the back-gate bias range where the third dot is not activated.

Original language	English
Pages (from-to)	245-251
Number of pages	7
Journal	Superlattices and Microstructures
Volume	34
Issue number	3-6
DOIs	https://doi.org/10.1016/j.spmi.2004.03.015
State	Published - Sep 2003

Keywords

Nano-wire
Potential fluctuation
SOI
Single-electron tunneling

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10.1016/j.spmi.2004.03.015

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title = "Single-electron tunneling in silicon-on-insulator nano-wire transistors",

abstract = "The gate bias dependent evolution of the Coulomb oscillations in a silicon-on-insulator nano-wire transistor is reported. Transport data obtained for a wide range of front- and back-gate bias strongly suggest that multiple quantum dots (QDs) with different potential depths are formed in the nano-wire channel. Our data can be clearly interpreted as arising from the turning on or off of one of these QDs as the back-gate bias is varied. Quantitative calculation based on the model of single-electron tunneling through two parallel QDs is in reasonable agreement with the measured data in the back-gate bias range where the third dot is not activated.",

keywords = "Nano-wire, Potential fluctuation, SOI, Single-electron tunneling",

author = "Cho, {K. H.} and Son, {S. H.} and Hong, {S. H.} and Kim, {B. C.} and Hwang, {S. W.} and D. Ahn and Park, {B. G.} and B. Naser and Lin, {J. F.} and Bird, {J. P.} and Ferry, {D. K.}",

year = "2003",

month = sep,

doi = "10.1016/j.spmi.2004.03.015",

language = "English",

volume = "34",

pages = "245--251",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

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TY - JOUR

T1 - Single-electron tunneling in silicon-on-insulator nano-wire transistors

AU - Cho, K. H.

AU - Son, S. H.

AU - Hong, S. H.

AU - Kim, B. C.

AU - Hwang, S. W.

AU - Ahn, D.

AU - Park, B. G.

AU - Naser, B.

AU - Lin, J. F.

AU - Bird, J. P.

AU - Ferry, D. K.

PY - 2003/9

Y1 - 2003/9

N2 - The gate bias dependent evolution of the Coulomb oscillations in a silicon-on-insulator nano-wire transistor is reported. Transport data obtained for a wide range of front- and back-gate bias strongly suggest that multiple quantum dots (QDs) with different potential depths are formed in the nano-wire channel. Our data can be clearly interpreted as arising from the turning on or off of one of these QDs as the back-gate bias is varied. Quantitative calculation based on the model of single-electron tunneling through two parallel QDs is in reasonable agreement with the measured data in the back-gate bias range where the third dot is not activated.

AB - The gate bias dependent evolution of the Coulomb oscillations in a silicon-on-insulator nano-wire transistor is reported. Transport data obtained for a wide range of front- and back-gate bias strongly suggest that multiple quantum dots (QDs) with different potential depths are formed in the nano-wire channel. Our data can be clearly interpreted as arising from the turning on or off of one of these QDs as the back-gate bias is varied. Quantitative calculation based on the model of single-electron tunneling through two parallel QDs is in reasonable agreement with the measured data in the back-gate bias range where the third dot is not activated.

KW - Nano-wire

KW - Potential fluctuation

KW - SOI

KW - Single-electron tunneling

UR - http://www.scopus.com/inward/record.url?scp=3242684232&partnerID=8YFLogxK

U2 - 10.1016/j.spmi.2004.03.015

DO - 10.1016/j.spmi.2004.03.015

M3 - Article

AN - SCOPUS:3242684232

SN - 0749-6036

VL - 34

SP - 245

EP - 251

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 3-6

ER -

Single-electron tunneling in silicon-on-insulator nano-wire transistors

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Keywords

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