Single-electron tunneling in silicon-on-insulator nano-wire transistors

K. H. Cho; S. H. Son; S. H. Hong; B. C. Kim; S. W. Hwang; D. Ahn; B. G. Park; B. Naser; J. F. Lin; J. P. Bird; D. K. Ferry

doi:10.1016/j.spmi.2004.03.015

Single-electron tunneling in silicon-on-insulator nano-wire transistors

K. H. Cho
, S. H. Son
, S. H. Hong
, B. C. Kim
, S. W. Hwang
, D. Ahn
, B. G. Park
, B. Naser
, J. F. Lin
, J. P. Bird
, D. K. Ferry

School of Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The gate bias dependent evolution of the Coulomb oscillations in a silicon-on-insulator nano-wire transistor is reported. Transport data obtained for a wide range of front- and back-gate bias strongly suggest that multiple quantum dots (QDs) with different potential depths are formed in the nano-wire channel. Our data can be clearly interpreted as arising from the turning on or off of one of these QDs as the back-gate bias is varied. Quantitative calculation based on the model of single-electron tunneling through two parallel QDs is in reasonable agreement with the measured data in the back-gate bias range where the third dot is not activated.

Original language	English
Pages (from-to)	245-251
Number of pages	7
Journal	Superlattices and Microstructures
Volume	34
Issue number	3-6
DOIs	https://doi.org/10.1016/j.spmi.2004.03.015
State	Published - Sep 2003

Keywords

Nano-wire
Potential fluctuation
SOI
Single-electron tunneling

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10.1016/j.spmi.2004.03.015

Cite this

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title = "Single-electron tunneling in silicon-on-insulator nano-wire transistors",

abstract = "The gate bias dependent evolution of the Coulomb oscillations in a silicon-on-insulator nano-wire transistor is reported. Transport data obtained for a wide range of front- and back-gate bias strongly suggest that multiple quantum dots (QDs) with different potential depths are formed in the nano-wire channel. Our data can be clearly interpreted as arising from the turning on or off of one of these QDs as the back-gate bias is varied. Quantitative calculation based on the model of single-electron tunneling through two parallel QDs is in reasonable agreement with the measured data in the back-gate bias range where the third dot is not activated.",

keywords = "Nano-wire, Potential fluctuation, SOI, Single-electron tunneling",

author = "Cho, \{K. H.\} and Son, \{S. H.\} and Hong, \{S. H.\} and Kim, \{B. C.\} and Hwang, \{S. W.\} and D. Ahn and Park, \{B. G.\} and B. Naser and Lin, \{J. F.\} and Bird, \{J. P.\} and Ferry, \{D. K.\}",

year = "2003",

month = sep,

doi = "10.1016/j.spmi.2004.03.015",

language = "English",

volume = "34",

pages = "245--251",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Elsevier Ltd.",

number = "3-6",

}

TY - JOUR

T1 - Single-electron tunneling in silicon-on-insulator nano-wire transistors

AU - Cho, K. H.

AU - Son, S. H.

AU - Hong, S. H.

AU - Kim, B. C.

AU - Hwang, S. W.

AU - Ahn, D.

AU - Park, B. G.

AU - Naser, B.

AU - Lin, J. F.

AU - Bird, J. P.

AU - Ferry, D. K.

PY - 2003/9

Y1 - 2003/9

N2 - The gate bias dependent evolution of the Coulomb oscillations in a silicon-on-insulator nano-wire transistor is reported. Transport data obtained for a wide range of front- and back-gate bias strongly suggest that multiple quantum dots (QDs) with different potential depths are formed in the nano-wire channel. Our data can be clearly interpreted as arising from the turning on or off of one of these QDs as the back-gate bias is varied. Quantitative calculation based on the model of single-electron tunneling through two parallel QDs is in reasonable agreement with the measured data in the back-gate bias range where the third dot is not activated.

AB - The gate bias dependent evolution of the Coulomb oscillations in a silicon-on-insulator nano-wire transistor is reported. Transport data obtained for a wide range of front- and back-gate bias strongly suggest that multiple quantum dots (QDs) with different potential depths are formed in the nano-wire channel. Our data can be clearly interpreted as arising from the turning on or off of one of these QDs as the back-gate bias is varied. Quantitative calculation based on the model of single-electron tunneling through two parallel QDs is in reasonable agreement with the measured data in the back-gate bias range where the third dot is not activated.

KW - Nano-wire

KW - Potential fluctuation

KW - SOI

KW - Single-electron tunneling

UR - https://www.scopus.com/pages/publications/3242684232

U2 - 10.1016/j.spmi.2004.03.015

DO - 10.1016/j.spmi.2004.03.015

M3 - Article

AN - SCOPUS:3242684232

SN - 0749-6036

VL - 34

SP - 245

EP - 251

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 3-6

ER -

Single-electron tunneling in silicon-on-insulator nano-wire transistors

Abstract

Keywords

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