Single-electron tunneling through a heavily doped GaAs quantum dot

S. H. Son, B. H. Choi, K. H. Cho, S. W. Hwang, Y. M. Park, Y. J. Park, E. K. Kim, D. Ahn

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


We report the fabrication and the characterization of a single-electron transistor using a heavily doped n+ GaAs thin layer. Simple wet etching was performed to obtain a quantum dot with a diameter of 50 nm, and the device showed clear Coulomb oscillations at temperatures much higher than 10 K. This dot size and high-temperature operation can hardly be obtained in other compound semiconductors based on single-electron transistors. Furthermore, the size of the fabricated dot was consistent with the T dependence.

Original languageEnglish
Pages (from-to)953-955
Number of pages3
JournalJournal of the Korean Physical Society
Issue number6
StatePublished - Dec 2002


  • Quantum dot
  • Singe elector tunneling


Dive into the research topics of 'Single-electron tunneling through a heavily doped GaAs quantum dot'. Together they form a unique fingerprint.

Cite this