Size control of silicon nanocrystals in silicon nitride film deposited by catalytic chemical vapor deposition at a low temperature (≤200 °C)

Kyoung Min Lee; Tae Hwan Kim; Jae Dam Hwang; Seunghun Jang; Kiyoung Jeong; Moonsup Han; Sunghwan Won; Junghyun Sok; Kyoungwan Park; Wan Shick Hong

doi:10.1016/j.scriptamat.2008.12.054

Size control of silicon nanocrystals in silicon nitride film deposited by catalytic chemical vapor deposition at a low temperature (≤200 °C)

Kyoung Min Lee, Tae Hwan Kim, Jae Dam Hwang, Seunghun Jang, Kiyoung Jeong, Moonsup Han, Sunghwan Won, Junghyun Sok, Kyoungwan Park, Wan Shick Hong

University of Seoul

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

We observed a wide range of photoluminescence (PL) energy variation from silicon nanocrystals prepared at a low temperature (≤200 °C). The size of the silicon nanocrystals was controlled by varying the NH₃/SiH₄ mixture ratio. The PL peaks consist of three compounds: nanocrystalline silicon, amorphous silicon and nitrogen dangling bond. The luminescence from the silicon nanocrystals was dominant, and its wavelength varied from 510 to 710 nm as the subgrain size changed from 3.5 to 5 nm.

Original language	English
Pages (from-to)	703-705
Number of pages	3
Journal	Scripta Materialia
Volume	60
Issue number	8
DOIs	https://doi.org/10.1016/j.scriptamat.2008.12.054
State	Published - Apr 2009

Keywords

Catalytic CVD
Low temperature process
Silicon nanocrystals

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10.1016/j.scriptamat.2008.12.054

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title = "Size control of silicon nanocrystals in silicon nitride film deposited by catalytic chemical vapor deposition at a low temperature (≤200 °C)",

abstract = "We observed a wide range of photoluminescence (PL) energy variation from silicon nanocrystals prepared at a low temperature (≤200 °C). The size of the silicon nanocrystals was controlled by varying the NH3/SiH4 mixture ratio. The PL peaks consist of three compounds: nanocrystalline silicon, amorphous silicon and nitrogen dangling bond. The luminescence from the silicon nanocrystals was dominant, and its wavelength varied from 510 to 710 nm as the subgrain size changed from 3.5 to 5 nm.",

keywords = "Catalytic CVD, Low temperature process, Silicon nanocrystals",

author = "Lee, {Kyoung Min} and Kim, {Tae Hwan} and Hwang, {Jae Dam} and Seunghun Jang and Kiyoung Jeong and Moonsup Han and Sunghwan Won and Junghyun Sok and Kyoungwan Park and Hong, {Wan Shick}",

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language = "English",

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T1 - Size control of silicon nanocrystals in silicon nitride film deposited by catalytic chemical vapor deposition at a low temperature (≤200 °C)

AU - Lee, Kyoung Min

AU - Kim, Tae Hwan

AU - Hwang, Jae Dam

AU - Jang, Seunghun

AU - Jeong, Kiyoung

AU - Han, Moonsup

AU - Won, Sunghwan

AU - Sok, Junghyun

AU - Park, Kyoungwan

AU - Hong, Wan Shick

PY - 2009/4

Y1 - 2009/4

N2 - We observed a wide range of photoluminescence (PL) energy variation from silicon nanocrystals prepared at a low temperature (≤200 °C). The size of the silicon nanocrystals was controlled by varying the NH3/SiH4 mixture ratio. The PL peaks consist of three compounds: nanocrystalline silicon, amorphous silicon and nitrogen dangling bond. The luminescence from the silicon nanocrystals was dominant, and its wavelength varied from 510 to 710 nm as the subgrain size changed from 3.5 to 5 nm.

AB - We observed a wide range of photoluminescence (PL) energy variation from silicon nanocrystals prepared at a low temperature (≤200 °C). The size of the silicon nanocrystals was controlled by varying the NH3/SiH4 mixture ratio. The PL peaks consist of three compounds: nanocrystalline silicon, amorphous silicon and nitrogen dangling bond. The luminescence from the silicon nanocrystals was dominant, and its wavelength varied from 510 to 710 nm as the subgrain size changed from 3.5 to 5 nm.

KW - Catalytic CVD

KW - Low temperature process

KW - Silicon nanocrystals

UR - http://www.scopus.com/inward/record.url?scp=60249103909&partnerID=8YFLogxK

U2 - 10.1016/j.scriptamat.2008.12.054

DO - 10.1016/j.scriptamat.2008.12.054

M3 - Article

AN - SCOPUS:60249103909

SN - 1359-6462

VL - 60

SP - 703

EP - 705

JO - Scripta Materialia

JF - Scripta Materialia

IS - 8

ER -

Size control of silicon nanocrystals in silicon nitride film deposited by catalytic chemical vapor deposition at a low temperature (≤200 °C)

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Keywords

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