Small size low noise amplifier with suppressed noise from gate resistance

Ickhyun Song; Hee Sauk Jhon; Hakchul Jung; Minsuk Koo; Hyungcheol Shin

doi:10.1002/mop.23702

Small size low noise amplifier with suppressed noise from gate resistance

Ickhyun Song, Hee Sauk Jhon, Hakchul Jung, Minsuk Koo, Hyungcheol Shin

School of Advanced Fusion Studies

Seoul National University

Research output: Contribution to journal › Article › peer-review

Abstract

In this article, design and characterization results of a fully integrated 5.8 GHz low noise amplifier (LNA) using 0.13-μm CMOS technology are presented. Commonly adopted inductive source degeneration for input impedance matching is eliminated to achieve smaller chip area while providing reasonable 50-Ω matching. Also by adding a capacitor between the gate and the source of the input transistor, a noise source from the gate resistance is partly suppressed. The layout of the designed LNA occupies total area of 0.68 mm ² and the results show forward power gain (S₂₁) of 12.7 dB and noise figure of 3.9 dB while consuming 6.85 mW from 1.2-V DC supply.

Original language	English
Pages (from-to)	2300-2304
Number of pages	5
Journal	Microwave and Optical Technology Letters
Volume	50
Issue number	9
DOIs	https://doi.org/10.1002/mop.23702
State	Published - Sep 2008

Keywords

CMOS
Gate resistance
Impedance matching
Low noise amplifier (LNA)
Noise

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10.1002/mop.23702

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title = "Small size low noise amplifier with suppressed noise from gate resistance",

abstract = "In this article, design and characterization results of a fully integrated 5.8 GHz low noise amplifier (LNA) using 0.13-μm CMOS technology are presented. Commonly adopted inductive source degeneration for input impedance matching is eliminated to achieve smaller chip area while providing reasonable 50-Ω matching. Also by adding a capacitor between the gate and the source of the input transistor, a noise source from the gate resistance is partly suppressed. The layout of the designed LNA occupies total area of 0.68 mm 2 and the results show forward power gain (S21) of 12.7 dB and noise figure of 3.9 dB while consuming 6.85 mW from 1.2-V DC supply.",

keywords = "CMOS, Gate resistance, Impedance matching, Low noise amplifier (LNA), Noise",

author = "Ickhyun Song and Jhon, {Hee Sauk} and Hakchul Jung and Minsuk Koo and Hyungcheol Shin",

year = "2008",

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T1 - Small size low noise amplifier with suppressed noise from gate resistance

AU - Song, Ickhyun

AU - Jhon, Hee Sauk

AU - Jung, Hakchul

AU - Koo, Minsuk

AU - Shin, Hyungcheol

PY - 2008/9

Y1 - 2008/9

N2 - In this article, design and characterization results of a fully integrated 5.8 GHz low noise amplifier (LNA) using 0.13-μm CMOS technology are presented. Commonly adopted inductive source degeneration for input impedance matching is eliminated to achieve smaller chip area while providing reasonable 50-Ω matching. Also by adding a capacitor between the gate and the source of the input transistor, a noise source from the gate resistance is partly suppressed. The layout of the designed LNA occupies total area of 0.68 mm 2 and the results show forward power gain (S21) of 12.7 dB and noise figure of 3.9 dB while consuming 6.85 mW from 1.2-V DC supply.

AB - In this article, design and characterization results of a fully integrated 5.8 GHz low noise amplifier (LNA) using 0.13-μm CMOS technology are presented. Commonly adopted inductive source degeneration for input impedance matching is eliminated to achieve smaller chip area while providing reasonable 50-Ω matching. Also by adding a capacitor between the gate and the source of the input transistor, a noise source from the gate resistance is partly suppressed. The layout of the designed LNA occupies total area of 0.68 mm 2 and the results show forward power gain (S21) of 12.7 dB and noise figure of 3.9 dB while consuming 6.85 mW from 1.2-V DC supply.

KW - CMOS

KW - Gate resistance

KW - Impedance matching

KW - Low noise amplifier (LNA)

KW - Noise

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JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

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Small size low noise amplifier with suppressed noise from gate resistance

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