Sol-gel deposited LaZrOx buffer layer for ferroelectric thin films

Ho Seung Jeon, Jeong Hwan Kim, Joo Nam Kim, Jong Hyun Im, Byung Eun Park, Chul Ju Kim

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To investigate the possibility of LaZrOx thin film as a buffer insulator for ferroelectric thin films, we fabricated (Bi,La)4Ti 3O12 (BLT) ferroelectric films on a silicon substrate by using the LaZrOx buffer insulator in forming the metal-ferroelectric- insulator-semiconductor (MFIS) structure. We prepared the LaZrOx thin film and BLT films by using a sol-gel method. The films were characterized by X-ray diffraction (XRD) analysis, atomic force microscopy (AFM), capacitance-voltage (C-V) characteristics, and leakage current density-voltage (J-V) characteristics for both LaZrOx/Si and BLT/LaZrOx/Si structures. From C-V measurement results, equivalent oxide thickness (EOT) values of LaZrOx thin films annealed at 700 °C and 800 °C were about 9 nm and 10 nm, respectively. Negligibly small hysteresis loops were observed for both LaZrOx/Si structures. The leakage current density at an applied voltage of 5 V was lower than 1.0 × 10-7 A/cm2 for all samples. For the case of the BLT/LaZrOx/Si structure, we obtained randomly oriented polycrystalline BLT films. From the C-V measurements, clockwise ferroelectric hysteresis loops were observed and the memory window width became larger as the bias voltage sweep increased from ±3 V to ±9 V. The memory window width was about 1.0 V for bias voltage sweep of ±7 V. The leakage current density was lower than 1.0 × 10-6 A/cm2 at 10 V.

Original languageEnglish
Pages (from-to)S100-S104
JournalJournal of the Korean Physical Society
Issue numberSUPPL. 2
StatePublished - Oct 2007


  • (Bi,La)TiO
  • Ferroelectric
  • LaZrO
  • Metal-ferroelectric-insulator-semiconductor


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