Solution-processed organic ferroelectric field-effect transistors on ultra-flexible substrates

Min Gee Kim; Dae Hee Han; Kyung Eun Park; Byung Eun Park

doi:10.1063/1.4964459

Solution-processed organic ferroelectric field-effect transistors on ultra-flexible substrates

Min Gee Kim, Dae Hee Han, Kyung Eun Park, Byung Eun Park

School of Electrical and Computer Engineering

University of Seoul

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

We fabricated ultra-flexible organic non-volatile ferroelectric field-effect transistors (FeFETs) with poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] on polyimide substrates, which adopted a solution-based top-contact/bottom-gate structure for low cost process without patterning. P(VDF-TrFE) gate dielectric layers and regioregular poly(3-hexylthiophene) active layers were formed by the spin-coating method. The field-effect mobility (μ_FE) was ∼0.28 cm²/V s, the on/off ratio was approximately 5.6 ï¿½ 10³, and the memory window (threshold voltage shift) was approximately 7 V. In addition, FeFETs were operated even at small bend radii without considerable changes in these values.

Original language	English
Article number	163502
Journal	Applied Physics Letters
Volume	109
Issue number	16
DOIs	https://doi.org/10.1063/1.4964459
State	Published - 17 Oct 2016

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title = "Solution-processed organic ferroelectric field-effect transistors on ultra-flexible substrates",

abstract = "We fabricated ultra-flexible organic non-volatile ferroelectric field-effect transistors (FeFETs) with poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] on polyimide substrates, which adopted a solution-based top-contact/bottom-gate structure for low cost process without patterning. P(VDF-TrFE) gate dielectric layers and regioregular poly(3-hexylthiophene) active layers were formed by the spin-coating method. The field-effect mobility (μFE) was ∼0.28 cm2/V s, the on/off ratio was approximately 5.6 {\"i}¿½ 103, and the memory window (threshold voltage shift) was approximately 7 V. In addition, FeFETs were operated even at small bend radii without considerable changes in these values.",

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AB - We fabricated ultra-flexible organic non-volatile ferroelectric field-effect transistors (FeFETs) with poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] on polyimide substrates, which adopted a solution-based top-contact/bottom-gate structure for low cost process without patterning. P(VDF-TrFE) gate dielectric layers and regioregular poly(3-hexylthiophene) active layers were formed by the spin-coating method. The field-effect mobility (μFE) was ∼0.28 cm2/V s, the on/off ratio was approximately 5.6 ï¿½ 103, and the memory window (threshold voltage shift) was approximately 7 V. In addition, FeFETs were operated even at small bend radii without considerable changes in these values.

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Solution-processed organic ferroelectric field-effect transistors on ultra-flexible substrates

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