Solution-processible organic-inorganic hybrid bipolar field-effect transistors

Organic-inorganic hybrid bipolar field-effect transistors (HBFETs) comprising a layer of p-type organic poly(3-hexylthiophene) (P3HT) separated from a parallel layer of n-type inorganic zinc oxide (ZnO) were demonstrated by solution processing. In order to achieve balanced hole and electron mobilities, we initially optimized the hole-transporting P3HT channel by the addition of the polar non-solvent acetonitrile (AN) to P3HT solutions in chloroform, which induced a selfassembled nano-fibril morphology and an enhancement of hole mobilities. For the electron channel, a wet-chemically-prepared ZnO layer was optimized by thermal annealing. Unipolar P3HT FET with 5% AN exhibited the highest hole mobility of 7.20 × 10⁻² cm²V⁻¹s⁻¹ while the highest electron mobility (3.64 × 10⁻² cm²V⁻¹s⁻¹) was observed in unipolar ZnO FETs annealed at 200°C. The organic-inorganic HBFETs consisting of the P3HT layer with 5% AN and ZnO annealed at 200°C exhibited well-balanced hole and electron mobilities of 1.94 × 10⁻² cm²V⁻¹s⁻¹ and 1.98 × 10⁻² cm²V⁻¹s⁻¹, respectively.