Spatial and dynamical properties of optical phonons in AlxGa1-xAs and GaAs/AlxGa1-xAs superlattices: Beyond the mean field approach

D. S. Kim, P. H. Song, S. H. Jhi, Y. S. Lim, E. J. Shin, Y. H. Yee, J. S. Khim, J. Ihm, J. H. Lee, J. S. Chang, D. H. Woo, K. N. Kang, D. Kim, J. J. Song

Research output: Contribution to journalArticlepeer-review

Abstract

Spatial and dynamical properties of optical phonons in AlxGa1-xAs alloys and GaAs/AlxGa1-xAs quantum wells are studied. An isotopically disordered harmonic crystal model is developed to study spatial properties of optical phonons in AlxGa1-xAs alloys. In the GaAs/AlxGa1-xAs system, transmission of the GaAs optical phonons through an AlxGa1-xAs barrier is studied using three-dimensional lattice dynamical model, fully accounting for the random arrangement of Ga and Al atoms in the alloy barrier. In the AlxGa1-xAs alloy, a localized-to-extended transition is found as a function of x. In GaAs/AlxGa1-xAs quantum wells, the transmission coefficient of the GaAs LO phonons through the alloy barrier remains significant below x < 0.3. These results are in good qualitative agreement with the experimentally deduced coherence length of LO phonons from nonequilibrium hot phonon populations.

Original languageEnglish
Pages (from-to)684-686
Number of pages3
JournalPhysica B: Condensed Matter
Volume219-220
Issue number1-4
DOIs
StatePublished - 1 Apr 1996

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