Abstract
Spatial and dynamical properties of optical phonons in AlxGa1-xAs alloys and GaAs/AlxGa1-xAs quantum wells are studied. An isotopically disordered harmonic crystal model is developed to study spatial properties of optical phonons in AlxGa1-xAs alloys. In the GaAs/AlxGa1-xAs system, transmission of the GaAs optical phonons through an AlxGa1-xAs barrier is studied using three-dimensional lattice dynamical model, fully accounting for the random arrangement of Ga and Al atoms in the alloy barrier. In the AlxGa1-xAs alloy, a localized-to-extended transition is found as a function of x. In GaAs/AlxGa1-xAs quantum wells, the transmission coefficient of the GaAs LO phonons through the alloy barrier remains significant below x < 0.3. These results are in good qualitative agreement with the experimentally deduced coherence length of LO phonons from nonequilibrium hot phonon populations.
Original language | English |
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Pages (from-to) | 684-686 |
Number of pages | 3 |
Journal | Physica B: Condensed Matter |
Volume | 219-220 |
Issue number | 1-4 |
DOIs | |
State | Published - 1 Apr 1996 |