Spatial and dynamical properties of optical phonons in AlxGa1-xAs and GaAs/AlxGa1-xAs superlattices: Beyond the mean field approach

  • D. S. Kim
  • , P. H. Song
  • , S. H. Jhi
  • , Y. S. Lim
  • , E. J. Shin
  • , Y. H. Yee
  • , J. S. Khim
  • , J. Ihm
  • , J. H. Lee
  • , J. S. Chang
  • , D. H. Woo
  • , K. N. Kang
  • , D. Kim
  • , J. J. Song

Research output: Contribution to journalArticlepeer-review

Abstract

Spatial and dynamical properties of optical phonons in AlxGa1-xAs alloys and GaAs/AlxGa1-xAs quantum wells are studied. An isotopically disordered harmonic crystal model is developed to study spatial properties of optical phonons in AlxGa1-xAs alloys. In the GaAs/AlxGa1-xAs system, transmission of the GaAs optical phonons through an AlxGa1-xAs barrier is studied using three-dimensional lattice dynamical model, fully accounting for the random arrangement of Ga and Al atoms in the alloy barrier. In the AlxGa1-xAs alloy, a localized-to-extended transition is found as a function of x. In GaAs/AlxGa1-xAs quantum wells, the transmission coefficient of the GaAs LO phonons through the alloy barrier remains significant below x < 0.3. These results are in good qualitative agreement with the experimentally deduced coherence length of LO phonons from nonequilibrium hot phonon populations.

Original languageEnglish
Pages (from-to)684-686
Number of pages3
JournalPhysica B: Condensed Matter
Volume219-220
Issue number1-4
DOIs
StatePublished - 1 Apr 1996

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