SPICE-Compatible Floating-Dot Single-Electron Memory Model with a New Description of SOI MOSFETS Including Quantum-Mechanical Effects

Y. S. Yu; S. H. Kim; B. H. Choi; S. H. Hong; S. W. Hwang; D. Ahn

SPICE-Compatible Floating-Dot Single-Electron Memory Model with a New Description of SOI MOSFETS Including Quantum-Mechanical Effects

Y. S. Yu, S. H. Kim, B. H. Choi, S. H. Hong, S. W. Hwang, D. Ahn

School of Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

We introduce a SPICE-compatible model for a floating-dot single-electron memory (FDSEM), which includes both the single-electron box (SEE) model and the modified SOI MOSFET model. In this model, a surface potential model for SOI devices is developed. The accuracy of the developed model is verified with experimental data from FDSEM devices.

Original language	English
Pages (from-to)	117-120
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	44
Issue number	1
State	Published - Jan 2004

Keywords

SOI MOSFET
SPICE
Single-electron Box
Single-electron memory

Cite this

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title = "SPICE-Compatible Floating-Dot Single-Electron Memory Model with a New Description of SOI MOSFETS Including Quantum-Mechanical Effects",

abstract = "We introduce a SPICE-compatible model for a floating-dot single-electron memory (FDSEM), which includes both the single-electron box (SEE) model and the modified SOI MOSFET model. In this model, a surface potential model for SOI devices is developed. The accuracy of the developed model is verified with experimental data from FDSEM devices.",

keywords = "SOI MOSFET, SPICE, Single-electron Box, Single-electron memory",

author = "Yu, {Y. S.} and Kim, {S. H.} and Choi, {B. H.} and Hong, {S. H.} and Hwang, {S. W.} and D. Ahn",

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AU - Yu, Y. S.

AU - Kim, S. H.

AU - Choi, B. H.

AU - Hong, S. H.

AU - Hwang, S. W.

AU - Ahn, D.

PY - 2004/1

Y1 - 2004/1

N2 - We introduce a SPICE-compatible model for a floating-dot single-electron memory (FDSEM), which includes both the single-electron box (SEE) model and the modified SOI MOSFET model. In this model, a surface potential model for SOI devices is developed. The accuracy of the developed model is verified with experimental data from FDSEM devices.

AB - We introduce a SPICE-compatible model for a floating-dot single-electron memory (FDSEM), which includes both the single-electron box (SEE) model and the modified SOI MOSFET model. In this model, a surface potential model for SOI devices is developed. The accuracy of the developed model is verified with experimental data from FDSEM devices.

KW - SOI MOSFET

KW - SPICE

KW - Single-electron Box

KW - Single-electron memory

UR - http://www.scopus.com/inward/record.url?scp=0842328990&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0842328990

SN - 0374-4884

VL - 44

SP - 117

EP - 120

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 1

ER -

SPICE-Compatible Floating-Dot Single-Electron Memory Model with a New Description of SOI MOSFETS Including Quantum-Mechanical Effects

Abstract

Keywords

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