Spontaneous emission and optical gain characteristics of blue InGaAlN/InGaN quantum well structures with reduced internal field

Seoung Hwan Park, Doyeol Ahn

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Abstract

Spontaneous emission and optical gain characteristics of blue InGaAlN/InGaN quantum well (QW) structures with reduced internal field were investigated by using the non-Markovian model with many-body effects. The spontaneous emission coefficient of the InGaAlN/InGaN system with reduced internal field is shown to be increased by 30 compared to that of the conventional InGaN/GaN system. This is mainly due to the increase in the optical matrix element by the reduced internal field effect. If the threshold optical gain is assumed to be about 13000 c m - 1, the InGaAlN/InGaN QW structure is expected to have smaller threshold current density the InGaN/GaN QW structure. In the case of the InGaAlN/InGaN system, the transition wavelength is a weak function of the carrier density.

Original languageEnglish
Article number043107
JournalJournal of Applied Physics
Volume112
Issue number4
DOIs
StatePublished - 15 Aug 2012

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