Spontaneous emission rate of green strain-compensated InGaN/InGaN LEDs using InGaN substrate

Seoung Hwan Park, Yong Tae Moon, Jeong Sik Lee, Ho Ki Kwon, Joong Seo Park, Doyeol Ahn

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Optical properties of strain-compensated InGaN/InGaN quantum well (QW) structures using a InGaN substrate are investigated using the multiband effective mass theory. These results are compared with those of conventional InGaN/GaN QW structures using a GaN substrate. The strain-compensated QW structure shows that a smaller well thickness is needed to obtain the transition wavelength of 530 nm than the InGaN/GaN QW structure. The spontaneous emission peak of a strain-compensated QW structure is shown to be much larger than that of a conventional QW structure. This is mainly attributed to the fact that the internal field is reduced due to the decrease in the lattice mismatch with a substrate.

Original languageEnglish
Pages (from-to)195-198
Number of pages4
JournalPhysica Status Solidi (A) Applications and Materials Science
Issue number1
StatePublished - Jan 2011


  • GaN
  • InGaN
  • electroluminescence
  • light emitting diodes
  • quantum wells


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