Spontaneous formation of Ge nanocrystals with the capping layer of Si ₃N₄ by N₂⁺ implantation and rapid thermal annealing

We studied Ge nanocrystals (nc-Ge) formed by bombarding Ge(100) surface with N₂⁺ gas followed by rapid thermal annealing (RTA). After initial N₂⁺ implantation, near-edge X-ray absorption fine structure and X-ray photoelectron spectroscopy (XPS) data showed formation of molecule-like N₂ species and chemically metastable Ge nitrides (GeN_x). The RTA transformed these into hemispherical nc-Ge of 10-25 nm in the diameter as clearly seen in transmission electron microscope images. XPS confirmed that the surface of the nc-Ge was covered with Ge ₃N₄ layer and underlying layer is also mostly likely Ge₃N₄. This simple process of forming isolated nc-Ge with Ge₃N₄ surrounding layer can be useful in non-volatile memory applications.