Spontaneous N incorporation onto a Si(100) surface

J. W. Kim, H. W. Yeom, K. J. Kong, B. D. Yu, D. Y. Ahn, Y. D. Chung, C. N. Whang, H. Yi, Y. H. Ha, D. W. Moon

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Through combined experimental and theoretical investigations, it was shown that N adsorption occurs extraordinarily. Such characteristic N incorporation may also explain the mechanism of the SiOxNy/Si(100) interface formation with N-rich Si layers. This result shows a possibility of new low-temperature process design for ultrathin oxynitride/nitride dielectric layers.

Original languageEnglish
Article number106101
Pages (from-to)106101/1-106101/4
JournalPhysical Review Letters
Issue number10
StatePublished - 14 Mar 2003


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