Spontaneous N incorporation onto a Si(100) surface

J. W. Kim; H. W. Yeom; K. J. Kong; B. D. Yu; D. Y. Ahn; Y. D. Chung; C. N. Whang; H. Yi; Y. H. Ha; D. W. Moon

Spontaneous N incorporation onto a Si(100) surface

J. W. Kim
, H. W. Yeom
, K. J. Kong
, B. D. Yu
, D. Y. Ahn
, Y. D. Chung
, C. N. Whang
, H. Yi
, Y. H. Ha
, D. W. Moon

Yonsei University
University of Seoul
Korea Institute of Science and Technology Information
Korea Research Institute of Standards and Science

Research output: Contribution to journal › Article › peer-review

45 Scopus citations

Abstract

Through combined experimental and theoretical investigations, it was shown that N adsorption occurs extraordinarily. Such characteristic N incorporation may also explain the mechanism of the SiO_xN_y/Si(100) interface formation with N-rich Si layers. This result shows a possibility of new low-temperature process design for ultrathin oxynitride/nitride dielectric layers.

Original language	English
Article number	106101
Pages (from-to)	106101/1-106101/4
Journal	Physical Review Letters
Volume	90
Issue number	10
State	Published - 14 Mar 2003

Cite this

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title = "Spontaneous N incorporation onto a Si(100) surface",

abstract = "Through combined experimental and theoretical investigations, it was shown that N adsorption occurs extraordinarily. Such characteristic N incorporation may also explain the mechanism of the SiOxNy/Si(100) interface formation with N-rich Si layers. This result shows a possibility of new low-temperature process design for ultrathin oxynitride/nitride dielectric layers.",

author = "Kim, \{J. W.\} and Yeom, \{H. W.\} and Kong, \{K. J.\} and Yu, \{B. D.\} and Ahn, \{D. Y.\} and Chung, \{Y. D.\} and Whang, \{C. N.\} and H. Yi and Ha, \{Y. H.\} and Moon, \{D. W.\}",

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T1 - Spontaneous N incorporation onto a Si(100) surface

AU - Kim, J. W.

AU - Yeom, H. W.

AU - Kong, K. J.

AU - Yu, B. D.

AU - Ahn, D. Y.

AU - Chung, Y. D.

AU - Whang, C. N.

AU - Yi, H.

AU - Ha, Y. H.

AU - Moon, D. W.

PY - 2003/3/14

Y1 - 2003/3/14

N2 - Through combined experimental and theoretical investigations, it was shown that N adsorption occurs extraordinarily. Such characteristic N incorporation may also explain the mechanism of the SiOxNy/Si(100) interface formation with N-rich Si layers. This result shows a possibility of new low-temperature process design for ultrathin oxynitride/nitride dielectric layers.

AB - Through combined experimental and theoretical investigations, it was shown that N adsorption occurs extraordinarily. Such characteristic N incorporation may also explain the mechanism of the SiOxNy/Si(100) interface formation with N-rich Si layers. This result shows a possibility of new low-temperature process design for ultrathin oxynitride/nitride dielectric layers.

UR - https://www.scopus.com/pages/publications/0038640284

M3 - Article

AN - SCOPUS:0038640284

SN - 0031-9007

VL - 90

SP - 106101/1-106101/4

JO - Physical Review Letters

JF - Physical Review Letters

IS - 10

M1 - 106101

ER -

Spontaneous N incorporation onto a Si(100) surface

Abstract

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