Strain and built-in potential effects on optical properties of wurtzite GaN/AlInN quantum dots

Seoung Hwan Park; Doyeol Ahn

doi:10.1016/j.physe.2018.12.015

Strain and built-in potential effects on optical properties of wurtzite GaN/AlInN quantum dots

Seoung Hwan Park, Doyeol Ahn

School of Electrical and Computer Engineering

Catholic University of Daegu

Research output: Contribution to journal › Article › peer-review

Abstract

Light emission characteristics of wurtzite (WZ) GaN/Al_xIn_1−xN quantum dots (QDs) with piezoelectric (PZ) and spontaneous (SP) polarizations were investigated as a function of Al content through self-consistent calculations. The spontaneous emission coefficient rapidly increases with decreasing Al content and becomes a maximum at about x = 0.8. This is mainly attributed to the fact that the overlap integral between electron and hole wavefunctions is enhanced owing to the broadened potential shape from strain and built-in potential in the valence band. On the other hand, GaN/Al_xIn_1−xN quantum wells (QWs) shows that the spontaneous emission coefficient becomes a maximum at x = 0.7. Also, the light emission intensity of GaN/Al_xIn_1−xN QDs is shown to be greatly increased by the screening effect, irrespective of Al content in the barrier and the case with x = 0.8 shows the largest screening potential.

Original language	English
Pages (from-to)	112-115
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	108
DOIs	https://doi.org/10.1016/j.physe.2018.12.015
State	Published - Apr 2019

Keywords

AlGaN
Built-in potential
GaN
Quantum dot
Strain

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title = "Strain and built-in potential effects on optical properties of wurtzite GaN/AlInN quantum dots",

abstract = "Light emission characteristics of wurtzite (WZ) GaN/AlxIn1−xN quantum dots (QDs) with piezoelectric (PZ) and spontaneous (SP) polarizations were investigated as a function of Al content through self-consistent calculations. The spontaneous emission coefficient rapidly increases with decreasing Al content and becomes a maximum at about x = 0.8. This is mainly attributed to the fact that the overlap integral between electron and hole wavefunctions is enhanced owing to the broadened potential shape from strain and built-in potential in the valence band. On the other hand, GaN/AlxIn1−xN quantum wells (QWs) shows that the spontaneous emission coefficient becomes a maximum at x = 0.7. Also, the light emission intensity of GaN/AlxIn1−xN QDs is shown to be greatly increased by the screening effect, irrespective of Al content in the barrier and the case with x = 0.8 shows the largest screening potential.",

keywords = "AlGaN, Built-in potential, GaN, Quantum dot, Strain",

author = "Park, \{Seoung Hwan\} and Doyeol Ahn",

note = "Publisher Copyright: {\textcopyright} 2018 Elsevier B.V.",

year = "2019",

month = apr,

doi = "10.1016/j.physe.2018.12.015",

language = "English",

volume = "108",

pages = "112--115",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Strain and built-in potential effects on optical properties of wurtzite GaN/AlInN quantum dots

AU - Park, Seoung Hwan

AU - Ahn, Doyeol

PY - 2019/4

Y1 - 2019/4

N2 - Light emission characteristics of wurtzite (WZ) GaN/AlxIn1−xN quantum dots (QDs) with piezoelectric (PZ) and spontaneous (SP) polarizations were investigated as a function of Al content through self-consistent calculations. The spontaneous emission coefficient rapidly increases with decreasing Al content and becomes a maximum at about x = 0.8. This is mainly attributed to the fact that the overlap integral between electron and hole wavefunctions is enhanced owing to the broadened potential shape from strain and built-in potential in the valence band. On the other hand, GaN/AlxIn1−xN quantum wells (QWs) shows that the spontaneous emission coefficient becomes a maximum at x = 0.7. Also, the light emission intensity of GaN/AlxIn1−xN QDs is shown to be greatly increased by the screening effect, irrespective of Al content in the barrier and the case with x = 0.8 shows the largest screening potential.

AB - Light emission characteristics of wurtzite (WZ) GaN/AlxIn1−xN quantum dots (QDs) with piezoelectric (PZ) and spontaneous (SP) polarizations were investigated as a function of Al content through self-consistent calculations. The spontaneous emission coefficient rapidly increases with decreasing Al content and becomes a maximum at about x = 0.8. This is mainly attributed to the fact that the overlap integral between electron and hole wavefunctions is enhanced owing to the broadened potential shape from strain and built-in potential in the valence band. On the other hand, GaN/AlxIn1−xN quantum wells (QWs) shows that the spontaneous emission coefficient becomes a maximum at x = 0.7. Also, the light emission intensity of GaN/AlxIn1−xN QDs is shown to be greatly increased by the screening effect, irrespective of Al content in the barrier and the case with x = 0.8 shows the largest screening potential.

KW - AlGaN

KW - Built-in potential

KW - GaN

KW - Quantum dot

KW - Strain

UR - https://www.scopus.com/pages/publications/85058812011

U2 - 10.1016/j.physe.2018.12.015

DO - 10.1016/j.physe.2018.12.015

M3 - Article

AN - SCOPUS:85058812011

SN - 1386-9477

VL - 108

SP - 112

EP - 115

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

ER -

Strain and built-in potential effects on optical properties of wurtzite GaN/AlInN quantum dots

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Keywords

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